不同晶面蓝宝石衬底上α-Ga_(2)O_(3)雾化学气相沉积法生长研究  

Growth of α-Ga_(2)O_(3)on Different Plane of Sapphire Substrate by Mist-CVD Method

作　　者：李雄杰 宁平凡[2] 陈世澳 乔思博 程红娟[3] 王英民 牛萍娟[2] LI Xiongjie;NING Pingfan;CHEN Shiao;QIAO Sibo;CHENG Hongjuan;WANG Yingmin;NIU Pingjuan(School of Mechanical Engineering,Tiangong University,Tianjin 300387,China;Institute of Quantum Materials and Devices,School of Electronics&Information Engineering,Tiangong University,Tianjin 300387,China;Key Laboratory of Advanced Semiconductor Crystal Materials Technology,The 46th Research Institute,CETC,Tianjin 300220,China)

机构地区：[1]天津工业大学机械工程学院,天津300387 [2]天津工业大学电子与信息工程学院,量子材料与器件研究院,天津300387 [3]中国电子科技集团公司第四十六研究所,新型半导体晶体材料技术重点实验室,天津300220

出　　处：《人工晶体学报》2025年第2期255-262,共8页Journal of Synthetic Crystals

基　　金：科技部重点研发计划项目(2022YFA1204001);天津工业大学学位与研究生教育教学改革与创新项目(YJSJG202406)。

摘　　要：采用雾化学气相沉积(Mist-CVD)法在不同晶面蓝宝石衬底上异质外延生长了α-Ga_(2)O_(3)薄膜,并利用XRD、SEM和紫外-可见分光光度计(UV-Vis)分析了薄膜样品的物相、光学特性和表面形貌。600℃以内,在C、M、A、R面蓝宝石衬底上生长纯相α-Ga_(2)O_(3)薄膜的温度窗口分别为420~480、480~550、590~600、540~600℃;对应纯相α-Ga_(2)O_(3)薄膜的光学带隙分别为5.12、5.23、5.25、5.21 eV。研究发现与C面蓝宝石衬底相比,在M、A、R面蓝宝石衬底上外延α-Ga_(2)O_(3)薄膜需要更高的生长温度,同时在M、A、R面蓝宝石衬底上获得的薄膜禁带宽度更大。样品表面形貌的SEM表征结果显示,不同晶面的α-Ga_(2)O_(3)薄膜表面形貌差异显著,C面蓝宝石衬底上α-Ga_(2)O_(3)薄膜存在“连续薄膜+大尺寸柱状岛”结构。本文关于不同晶面蓝宝石衬底外延α-Ga_(2)O_(3)薄膜的研究对α-Ga_(2)O_(3)材料的应用有一定参考价值。α-Ga_(2)O_(3) heteroepitaxial thin films on sapphire substrates with different crystal planes were prepared by mist-chemical vapor deposition(Mist-CVD)technique.The phase,optical properties and surface morphology of the samples were investigated by XRD,SEM and UV-Vis.The temperature windows for growing pure phase α-Ga_(2)O_(3)thin films on C,M,A and R-plane sapphire substrates within 600℃ are 420~480,480~550,590~600 and 540~600℃,and optical band gaps of the pure phase α-Ga_(2)O_(3)thin film are 5.12,5.23,5.25 and 5.21 eV,respectively.Compared to C-plane sapphire substrates,epitaxialα-Ga_(2)O_(3)thin films on M,A and R-plane sapphire substrates require higher growth temperatures,and the bandgap width of the films obtained on M,A and R-plane sapphire substrates are larger.The SEM results of the sample surface show significant differences in the surface morphology of α-Ga_(2)O_(3)thin films with different crystal planes,and there is a"continuous layer+large island"structure on the α-Ga_(2)O_(3)thin film grown on C-plane sapphire substrate.The study of epitaxial α-Ga_(2)O_(3)thin films on sapphire substrates with different crystal planes in this article provide valuable reference for the application of α-Ga_(2)O_(3)materials.

关 键 词：α-Ga_(2)O_(3) 蓝宝石衬底 雾化学气相沉积 异质外延 生长温度 禁带宽度 

分 类 号：TN304.055[电子电信—物理电子学]