Ga_(2)O_(3)/NiO_(x)肖特基势垒二极管器件的性能优化研究  

Performance Optimization Study of Ga_(2)O_(3)/NiO_(x) Schottky Barrier Diodes

作　　者：王凯凯 杜嵩 徐豪 龙浩 WANG Kaikai;DU Song;XU Hao;LONG Hao(School of Electronic Science and Engineering(National Model Microelectronics College),Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学电子科学与技术学院(国家示范性微电子学院),厦门361005

出　　处：《人工晶体学报》2025年第2期337-347,共11页Journal of Synthetic Crystals

基　　金：国家自然科学基金(62174140)。

摘　　要：由于缺乏p型氧化镓(Ga_(2)O_(3)),p型氧化镍(p-NiO_(x))通常被用于Ga_(2)O_(3)肖特基势垒二极管(SBD)中,这类二极管一般采用结终端延伸(JTE)或异质结势垒肖特基(HJBS)结构。然而,NiO_(x)对器件性能的影响尚未被充分研究。在本研究中,通过Sentaurus TCAD对JTE和HJBS结构中的NiO_(x)影响进行了研究,并提出了一种结合NiO_(x)/Ga_(2)O_(3)HJBS和NiO_(x) JTE的新型Ga_(2)O_(3)肖特基二极管。在JTE结构中,击穿电压(BV)与NiO_(x)掺杂浓度呈正相关,与NiO_(x)倾斜角度呈负相关。在HJBS结构中,BV随NiO_(x)场环(FR)的宽度和深度增加而提高,但随着FR与阳极边缘之间的间距增加而降低。新型复合器件的参数确定为10°倾斜角和3×10^(19) cm^(-3)掺杂浓度的NiO_(x) JTE,以及5μm宽、1.5μm深和1μm间距的NiO_(x) HJBS环。实现了4.52 kV的BV、5.68 mΩ·cm 2的比导通电阻(R_(on,sp))和3.57 GW/cm 2的功率优值(PFOM),相比其他实验报道的数据,BV提升了113%,PFOM提升了132%。本研究为利用NiO_(x) JTE和HJBS结构的垂直Ga_(2)O_(3)SBD设计提供了一种有效提升BV和PFOM性能的方法。Due to the absence of p-type gallium oxide(Ga_(2)O_(3)),p-type nickel oxide(p-NiO_(x))was commonly employed in Ga_(2)O_(3)Schottky barrier diode(SBD),which typically utilized either junction termination extension(JTE)or hetero-junction barrier Schottky(HJBS)structure.However,the influence of the NiO_(x) on device performance has been insufficiently explored.In this work,the effects of NiO_(x) in JTE and HJBS were investigated by Sentaurus TCAD.In JTE structure,breakdown voltage(BV)presented positive correlation with NiO_(x) doping concentration and negative correlation with the NiO_(x) tilt angle.In HJBS structure,BV increased with the width and depth of the NiO_(x) field ring(FR),while decreased with the spacing between the FR and the anode edge.The optimal configuration was identified,consisting of 10°tilt angle and doping concentration of 3×10^(19) cm^(-3) for the NiO_(x) JTE,as well as NiO_(x) rings of 5μm width,1.5μm depth,and 1μm spacing for NiO_(x) HJBS.This configuration achieved the BV of 4.52 kV,specific on-resistance(R_(on,sp))of 5.68 mΩ·cm 2 and performance figure of merit(PFOM)value of 3.57 GW/cm 2,representing enhancements of 113% in BV and 132% in PFOM compared to experimental reports.This study contributed a design approach for vertical Ga_(2)O_(3)SBD utilizing NiO_(x) JTE and HJBS structures,enhancing BV and PFOM in SBD.

关 键 词：β-Ga_(2)O_(3) NiO_(x) SBD 击穿电压 PFOM JTE HJBS 

分 类 号：TN303[电子电信—物理电子学] TN313