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作 者:朱伟龙 王鹏 郑辰雅 孙鹏飞 Zhu Weilong;Wang Peng;Zheng Chenya;Sun Pengfei(East China Institute of Microelectronics,Hefei 230088,China;National Laboratory of Science and Technology on Analog Integrated Circuit,Chongqing 400060,China)
机构地区:[1]华东微电子研究所,合肥230088 [2]模拟集成电路国家重点实验室,重庆400060
出 处:《强激光与粒子束》2025年第3期102-109,共8页High Power Laser and Particle Beams
基 金:模拟集成电路国家级重点实验室基金项目(JCKY2022210C005)。
摘 要:混合集成DC-DC变换器因其工作温度范围宽和长期可靠性高在苛刻环境及高可靠需求应用场景中得到广泛应用。基于GaNHEMT器件优异的高频低损耗特性,结合有源箝位软开关拓扑、混合集成微组装技术和高载流低热阻气密封装技术,设计了一款28V输入、5V/20A输出的混合集成DC-DC变换器。该变换器开关频率800kHz,峰值效率达92%。详细阐述了有源箝位功率电路设计、GaNHEMT驱动电路寄生参数与震荡电压控制、同步整流时序与死区时间优化、厚膜混合集成工艺及散热的设计方法和技术细节,并通过仿真与样机实验,验证和展示了GaNHEMT和混合集成电路在高功率密度和高效率方面的优势。Hybrid integrated DC-DC converters are widely used in harsh environments and applications with high-reliability requirements due to their wide operating temperature range and long-term reliability.This paper presents the design of a hybrid integrated DC-DC converter with an input voltage of 28 V and an output of 5 V/20 A,leveraging the excellent high-frequency,low-loss characteristics of gallium nitride(GaN)devices.The design incorporates an active clamp soft-switching topology,hybrid integrated micro-assembly technology,and high-current,low thermal resistance hermetic packaging techniques.The converter operates at a switching frequency of 800 kHz and achieves a peak efficiency of 92%.The paper elaborates in detail on the design methods and technical details of the active clamp power circuit,the control of parasitic parameters and oscillating voltage in the GaN HEMT drive circuit,the optimization of synchronous rectification timing and dead-time,the thick-film hybrid integration process,and heat dissipation design.Through simulations and prototype experiments,it verifies and demonstrates the advantages of GaN HEMTS and hybrid integrated circuits in high power density and high efficiency aspects.
关 键 词:混合集成电路 有源箝位正激 氮化镓 同步整流 高可靠
分 类 号:TN45[电子电信—微电子学与固体电子学] TN86
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