射频功率对ITO薄膜结构及性能影响的研究  

Study on the Effect of Radio Frequency Power on the Structure and Properties of ITO Films

作　　者：孙冰成 张贤旺 张健[1] SUN Bingcheng;ZHANG Xianwang;ZHANG Jian(School of Mechanical and Power Engineering,Shenyang University of Chemical Technology,Shenyang 110142,China)

机构地区：[1]沈阳化工大学机械与动力工程学院,辽宁沈阳110142

出　　处：《真空》2025年第2期62-67,共6页Vacuum

摘　　要：使用射频(RF)磁控溅射技术,在耐高温石英玻璃基底上制备了氧化铟锡(ITO)透明导电氧化物薄膜,旨在优化其光电特性。通过系统调控溅射功率变量,深入剖析了该参数对ITO薄膜质量及光电性能的影响机理,之后又对薄膜进行退火处理,探究了退火前后薄膜性能的变化。结果表明:随着溅射功率的增加,ITO薄膜的可见光平均透过率呈现递减趋势,而薄膜的片电阻呈现先下降后上升再下降的趋势;当溅射功率为120 W且经过300℃退火后,所制备薄膜综合性能最佳,其可见光平均透过率达到90.59%,方阻低至29.4Ω/□,品质因数达到1.26×10^(-2)Ω^(-1)。Indium tin oxide(ITO)transparent conductive oxide films were prepared on high temperature resistant quartz glass substrates by radio frequency(RF)magnetron sputtering technology,aiming to optimize their photoelectric properties.By systematically regulating the sputtering power variable,the influence mechanism of this parameter on the quality and photoelectric properties of ITO films was deeply analyzed.Then,the films were annealed to explore the change of film properties before and after annealing.The results show that with the increase of sputtering power,the average transmittance of visible light of ITO film shows a decreasing trend,while the sheet resistance of the film shows a trend of decreasing first,then increasing and then decreasing.When the sputtering power is set to 120 W and annealed at 300℃,the prepared film has the best comprehensive performance:the average transmittance of visible light reaches 90.59%,the square resistance is as low as 29.4Ω/□,and the quality factor reaches 1.26×10^(-2)Ω^(-1).

关 键 词：射频磁控溅射 退火工艺 氧化铟锡 光电性能 溅射功率 

分 类 号：TB34[一般工业技术—材料科学与工程]