嘧啶提高多晶硅CMP去除速率的机理研究  

Mechanism of CMP removal rate improvment of polycrystalline silicon with pyrimidine

作　　者：张潇 周建伟 杨云点 罗翀 栾晓东 邵祥清 李瑾 ZHANG Xiao;ZHOU Jianwei;YANG Yundian;LUO Chong;LUAN Xiaodong;SHAO Xiangqing;LI Jin(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Semiconductor Technology Innovation Center(Beijing)Corporation,Beijing 100176,China;Innovation and Research Institute,Hebei University of Technology,Shijiazhuang 050299,China;School of Electrical and Electronic Engineering,Jiangsu Ocean University,Lianyungang 222000,Jiangsu Province,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]北方集成电路技术创新中心(北京)有限公司,北京100176 [3]河北工业大学创新研究院,河北石家庄050299 [4]江苏海洋大学电子工程学院,江苏连云港222000

出　　处：《电子元件与材料》2025年第1期103-109,共7页Electronic Components And Materials

基　　金：河北工业大学创新研究院(石家庄)石家庄市科技合作专项基金(SJZZXB23003);国家自然科学基金(62074049);中国博士后基金(2024M751207)。

摘　　要：为了提高多晶硅去除速率,从化学作用和机械作用两个方面揭示嘧啶在多晶硅表面的影响机理。一方面,X射线光电子能谱实验表明嘧啶的加入在多晶硅表面产生吸附,促进了Si-Si键的极化断裂以及Si-O键的形成,加速了多晶硅表面软质层的形成以及机械作用对其的去除。另一方面,Zeta电位、摩擦力、温度数据表明嘧啶水解产生的嘧啶阳离子降低了SiO2磨料之间的静电斥力,导致表面间的摩擦力增大,加强了机械作用;同时温度升高加快了CMP过程中化学反应的速率,从而促进了化学反应的进行。因此,嘧啶的加入既提高了化学作用,也加强了机械作用,使多晶硅去除速率提高了约2.8倍。In order to improve the removal rate of polysilicon,the mechanism of pyrimidine on the polysilicon surface was revealed from chemical and mechanical aspects.On the one hand,X-ray photoelectron spectroscopy experiments showed that pyrimidine was adsorbed on the surface of polycrystalline silicon,by which the polarization fracture of Si-Si bond and the formation of Si-O bond was promoted,and the formation and mechanical removal rate of this soft layer on the surface of polycrystalline silicon was accelerated.On the other hand,Zeta potential and friction data showed that the pyrimidine cation produced by pyrimidine hydrolysis reduced the electrostatic repulsion between SiO2 abrasives,resulting in increasing friction between surfaces and polysilicon during CMP.In addition,the increase of temperature accelerated the rate of chemical reaction in the CMP process,thus the chemical reaction was promoted.Therefore,the addition of pyrimidine not only improves the chemical effect,but also strengthens the mechanical effect,As a result,the removal rate of polysilicon is increased by about 2.8 times.

关 键 词：化学机械抛光(CMP) 多晶硅 嘧啶 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]