GD-MS法在测定太阳能级多晶硅中痕量杂质中的应用研究  

Research on the Application of GD-MS Method in Determination of Trace Impurities in Solar Grade Polysilicon

作　　者：王鑫[1] 陈潇[1] 何友琴[1] 张鑫 王东雪[1] WANG Xin;CHEN Xiao;HE Youqin;ZHANG Xin;WANG Dongxue(The 46th Research Institute,CETC,Tianjin 300200,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子质量》2025年第2期73-76,共4页Electronics Quality

摘　　要：采用辉光放电质谱法(GD-MS)对太阳能级多晶硅中的Na、B、Ni、Co、Fe、Mn、Cu、Ti、Mg等痕量杂质元素进行了测定,通过优化并选择GD-MS的工作参数,考察了在半定量条件下GD-MS法测定痕量杂质的精密度。结果表明,采用GD-MS法测定太阳能级多晶硅中Na、B、Ni、Co、Fe、Mn、Cu、Ti、Mg等元素时相对标准偏差都小于30%。并将GD-MS法的测定结果与电感耦合等离子质谱法(ICP-MS)的测定结果进行了对比,结果表明两者的测试结果基本一致,从而证明了GD-MS法在测定太阳能级多晶硅中痕量杂质方面的有效性。Trace impurities such as Na,B,Ni,Co,Fe,Mn,Cu,Ti and Mg in solar grade polysilicon are determined by glow discharge mass spectrometry(GD-MS).By optimizing and selecting the working parameters of GD-MS,the precision of the determination of trace impurities by GD-MS is investigated under semi-quantitative conditions.The results show that the relative standard deviations of Na,B,Ni,Co,Fe,Mn,Cu,Ti and Mg in solar grade polysilicon are all less than 30%by GD-MS method.The measurement results of GD-MS method are compared with those of inductively coupled plasma mass spectrometry(ICP-MS),and the results show that the test results obtained by these two methods are basically consistent,which proves the effectiveness of GD-MS method in determining trace impurities in solar grade polycrystalline silicon.

关 键 词：太阳能级多晶硅 辉光放电质谱法 杂质元素 

分 类 号：TM914.41[电气工程—电力电子与电力传动]