超声作用下碳化硅CMP流场特性分析  

Analysis of flow field characteristics of silicon carbide CMP under ultrasonic action

作　　者：王泽晓 叶林征 祝锡晶 刘瑶 啜世达 吕博洋 王栋 WANG Zexiao;YE Linzheng;ZHU Xijing;LIU Yao;CHUAI Shida;LV Boyang;WANG Dong(College of Mechanical Engineering,North University of China,Taiyuan 038507,China;Shanxi Key Laboratory of Advanced Manufacturing Technology,Taiyuan 038507,China;Department of Engineering,Faculty of Environment,Science and Economy,University of Exeter,Exeter EX44QF,UK)

机构地区：[1]中北大学机械工程学院,太原038507 [2]先进制造技术山西省重点实验室,太原038507 [3]埃克塞特大学环境科学与经济学院工程学系,埃克塞特EX44QF,英国

出　　处：《金刚石与磨料磨具工程》2025年第1期102-112,共11页Diamond & Abrasives Engineering

摘　　要：针对目前碳化硅抛光效率低、表面质量差等加工难题,采用超声辅助CMP(UCMP)加工工艺对其表面进行光滑无损化抛光。为探究超声辅助对CMP流场的影响,以超声振动下的抛光流场特性为研究对象,基于可实现k−ε模型对超声作用下的抛光流场特性进行分析,并采用有限元分析方法探究不同超声频率、超声振幅、液膜厚度对抛光流场内速度、压力的影响,且开展CMP和UCMP对照试验。结果表明:超声频率对抛光液流场有明显地促进作用,随着超声频率从20 kHz增大到40 kHz,流场最大速度从324.10 m/s增大到698.20 m/s,最大压力从177.00 MPa增大到1580.00 MPa;与CMP相比,UCMP后碳化硅晶片可获得更好的抛光质量与更高的材料去除率,其表面粗糙度R_(a)、材料去除率R_(MRR)分别为3.2 nm和324.23 nm/h。Objectives:Silicon carbide faces challenges such as low polishing efficiency and poor surface quality during processing.The ultrasonic-assisted CMP(UCMP)processing technology is used to smooth and non-destructive polishing the SiC surface,and the influence of ultrasonic assistance on the CMP flow field is deeply investigated in order to improve the polishing effect of SiC.Methods:(1)COMSOL Multiphysics is used to conduct CFD simulation on the polishing flow field of the silicon carbide UCMP process,aiming to explore the influences of factors such as ultrasonic frequency,ultrasonic amplitude,and liquid film thickness on the polishing flow field.A model is constructed to study the polishing flow field characteristics under ultrasonic vibration,based on an achievable k−εmodel to analyze the polishing flow field characteristics under ultrasonic action.(2)The influences of ultrasonic frequency,ultrasonic amplitude,and liquid film thickness on velocity and pressure in the polishing flow field are studied by the finite element method.(3)The CMP and UCMP comparative experiments are conducted to compare the polishing effects of SiC wafers under the two processes.Results:The ultrasonic frequency has a significant impact on the flow field of the polishing solution,and it has a significant promoting effect on the flow field of the polishing solution.As the ultrasound frequency increases from 20 kHz to 40 kHz,the maximum velocity of the flow field increases from 324.10 m/s to 698.20 m/s,and the maximum pressure increases from 177.00 MPa to 1580.00 MPa.Compared with CMP,the polishing quality of the SiC wafer after UCMP is better,with a minimum surface roughness R_(a) of 3.2 nm and a higher material removal rate of 324.23 nm/h.Conclusions:The UCMP process is used to process the SiC surface,and the positive effect of ultrasoundassisted polishing flow field is verified through theoretical analysis and experimental verification.The relationship between the ultrasonic frequency and the polishing flow field characteristics has be

关 键 词：超声辅助 碳化硅 流体动力学仿真 化学机械抛光 

分 类 号：TG580.6922[金属学及工艺—金属切削加工及机床]