大尺寸光伏单晶硅制备技术研究进展  

RESEARCH PROGRESS IN PREPARATION TECHNOLOGY OF LARGE-SIZED PHOTOVOLTAIC MONOCRYSTALLINE SILICON

作　　者：康家铭 黄振玲 李太 赵亮 周翔 吕国强[1,2] Kang Jiaming;Huang Zhenling;Li Tai;Zhao Liang;Zhou Xiang;Lyu Guoqiang(School of Metallurgy and Energy Engineering,Kunming University of Technology,Kunming 650093,China;Yunnan Silicon Industry Engineering Research Center,Kunming 650093,China)

机构地区：[1]昆明理工大学冶金与能源工程学院,昆明650093 [2]云南省硅工业工程研究中心,昆明650093

出　　处：《太阳能学报》2025年第3期310-319,共10页Acta Energiae Solaris Sinica

基　　金：云南省重点研发项目(202002AB080030,202103AA080003);云南省科技重大专项(202102AB080016,202202AG050012);云南省科技计划项目(202302AD080008)。

摘　　要：针对现有大尺寸光伏级单晶硅多次装料拉晶技术(RCZ)、炉外加料技术(OCZ)、连续装料拉晶技术(CCZ)等制备技术的研究现状及特点进行归纳总结,对比分析几种光伏单晶硅制备技术在大尺寸、高品质、低成本方面的优势和难点,并结合未来硅料来源分析对光伏单晶硅生长技术的发展做出展望。This paper summarizes the research status and characteristics of existing large-size photovoltaic grade monocrystalline silicon preparation technologies such asrecharged Czochralski(RCZ)and off-furnace charged Czochralski(OCZ),continuous Czochralski(CCZ),etc.,compares and analyzes the advantages and difficulties of several photovoltaic monocrystalline silicon preparation technologies in terms of large-size,high quality,and low cost,and makes prospects for the development of photovoltaic monocrystalline silicon growth technology based on the analysis of future silicon material sources.

关 键 词：单晶硅 硅片 坩埚 太阳电池 直拉法 

分 类 号：TN304.12[电子电信—物理电子学]