基于AZ6130光刻胶掩膜的氮化硅ICP刻蚀工艺  

ICP etching process of silicon nitride based on AZ6130 photoresist mask

作　　者：白敬元 杨洪广[1] 占勤[1] 窦志昂 张志坤 BAI Jing-yuan;YANG Hong-guang;ZHAN Qin;DOU Zhi-ang;ZHANG Zhi-kun(China Institute of Atomic Energy,Beijing 102413,China)

机构地区：[1]中国原子能科学研究院,北京102413

出　　处：《材料热处理学报》2025年第3期208-214,共7页Transactions of Materials and Heat Treatment

基　　金：中核集团英才基金(219601)。

摘　　要：使用AZ6130光刻胶作为等离子增强化学气相沉积(PECVD)氮化硅的感应耦合等离子体(ICP)刻蚀掩膜,分析了前后烘温度、匀胶转速及曝光剂量对光刻胶侧壁形貌的影响,探究了ICP功率对光刻胶掩膜及氮化硅刻蚀形貌的影响。结果表明:当前烘温度为90℃、后烘温度为110℃、匀胶转速为6000 r/min、曝光剂量为57.6 mJ/cm^(2)时,可以得到截面形貌较佳的光刻胶掩膜;当ICP功率为300 W、RF功率为50 W、腔室压力为5 mTorr、CF_(4)流量为50 mL/min、N_(2)流量为50 mL/min、托盘温度为10℃时,可以得到刻蚀缺陷较少的氮化硅微结构,该工艺的刻蚀速率为1.71 nm/s、刻蚀选择比为0.83。AZ6130 photoresist was used as an inductively coupled plasma(ICP)etching mask of silicon nitride prepared by plasma enhanced chemical vapor deposition(PECVD).The effects of pre bake and post-exposure bake temperatures,spin speed,and exposure dose on the sidewall morphology of the photoresist were analyzed,and the influence of ICP power on the etched morphology of photoresist mask and silicon nitride was studied.The results show that when the pre bake temperature is 90℃,the post-exposure bake temperature is 110℃,the spin speed is 6000 r/min,and the exposure dose is 57.6 mJ/cm^(2),a photoresist mask with better sidewall morphology can be obtained.When the ICP power is 300 W,the RF power is 50 W,the chamber pressure is 5 mTorr,the flow rate of CF_(4) is 50 mL/min,the flow rate of N_(2) is 50 mL/min,and the tray temperature is 10℃,a silicon nitride microstructure with fewer etching defects can be obtained.The etching rate of this process is 1.71 nm/s,and the etching selectivity ratio is 0.83.

关 键 词：光刻 氮化硅 感应耦合等离子体(ICP)刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]