ICP刻蚀Mo侧壁角度及刻蚀速率的研究  

Research of Transformer-Coupled Plasma Etching Molybdenum Sidewall Profile and Etch Rate

作　　者：田本朗 梁柳洪 何成勇 罗淦 郭耀祖 米佳[1] TIAN Benlang;LIANG Liuhong;HE Chengyong;LUO Gan;GUO Yaozu;MI Jia(The 26th Institute of China Electronic Technology Group Corporation,Chongqing 400060,China;The 24th Institute of China Electronic Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《压电与声光》2025年第1期59-62,共4页Piezoelectrics & Acoustooptics

摘　　要：采用基于Cl基气体的电感耦合等离子体(ICP)干法刻蚀设备对金属Mo薄膜进行刻蚀,研究了刻蚀条件对侧壁角度以及刻蚀速率的控制。通过调节ICP干法刻蚀过程中射频源功率、ICP离子源功率、腔体压力、混合气体流量比例等工艺参数,实现了14.8°~85.0°图形侧壁倾角,表明图形侧壁角度可在大范围内得到控制,刻蚀速率可在148~232 nm/min调节,为薄膜体声波谐振器(FBAR)器件研制工艺打下良好基础。This study examined the influence of the chlorine-based inductively-coupled plasma(ICP)dry etch system on Mo sidewall profile and etch rate.A sidewall angle of 14.8°to 85.0°was achieved by changing the radiofrequency(RF)and ICP power,chamber pressure,and mixed gas flow ratio during the ICP dry etching process.The experiment results show that the Mo sidewall profile can be controlled over a wide range,and the etching rate can be adjusted between 148 and 232 nm/min.Therefore,this study provides a helpful process guideline for fabricating thin-film bulk acoustic resonator(FBAR)devices.

关 键 词：电感耦合等离子体(ICP) MO 薄膜体声波谐振器(FBAR) 侧壁角度 刻蚀速率 

分 类 号：TN305.7[电子电信—物理电子学]