压力传感器湿法腐蚀敏感膜的工艺研究  

Process Study of Wet Etching Sensitive Film for Pressure Sensors

作　　者：闫施锦 王丙寅 王志强 雷程[1] 冀鹏飞 邱海兵 谭秋林[1] 梁庭[1] YAN Shijin;WANG Bingyin;WANG Zhiqiang;LEI Cheng;JI Pengfei;QIU Haibing;TAN Qiulin;LIANG Ting(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan 030051,China;Inner Mongolia Power Machinery Research Institute,Hohhot 010010,China)

机构地区：[1]中北大学动态测量技术国家重点实验室,山西太原030051 [2]内蒙动力机械研究所,内蒙古呼和浩特010010

出　　处：《压电与声光》2025年第1期63-68,共6页Piezoelectrics & Acoustooptics

基　　金：国家重点研发计划(2023YFB3209100);山西省重点研发计划(2023020302010)。

摘　　要：随着压力传感器的小型化和高频化发展,降低成本并提升制造工艺成为当前研究的关键。该文通过优化硅片湿法腐蚀工艺来降低压力传感器的制造成本,并使其性能更贴近设计要求。首先,深入研究了不同浓度TMAH(四甲基氢氧化铵)对硅片腐蚀效果的影响,通过优化腐蚀工艺条件,确定了在80℃下使用质量分数为25%的TMAH作为腐蚀液,最终成功获得了表面粗糙度仅为0.121μm的低粗糙度硅片表面。然后利用有限元模拟技术,对比了质量分数为5%TMAH湿法腐蚀条件下的灵敏度(109.162 mV/MPa)与质量分数为25%TMAH湿法腐蚀条件下的灵敏度(103.276 mV/MPa),而后者更接近设计要求的灵敏度值(100 mV/MPa)。成功总结了高效的湿法腐蚀工艺,并基于该工艺设计了压力传感器的制造流程。预期该流程能以低成本生产出性能更贴近设计要求的压力传感器,为压力传感器的小型化和高频化发展提供了有力的技术支持。With the miniaturization and increasing frequency of pressure sensors,it has become critical to develop low-cost manufacturing processes.By studying the effect of different concentrations of TMAH on wafer corrosion,the optimal process conditions were determined to be 80℃with 25 wt%TMAH,achieving a low roughness surface of 0.121μm.Finite element simulations indicate that the sensitivity under 25 wt%wet etching conditions(103.276 mV/MPa)is closer to the design value of sensitivity(100 mV/MPa)than that under 5 wt%TMAH wet etching(109.162 mV/MPa).An efficient wet etching process is summarized,based on which a pressure sensor manufacturing process was designed.This approach is expected to produce sensors that more closely meet design requirements at a lower cost.

关 键 词：压力传感器 湿法腐蚀 敏感膜 腐蚀形貌 粗糙度 

分 类 号：TN305[电子电信—物理电子学] TN43