氧化镓异质衬底集成技术研究进展  

Research Progress on Heterogeneous Substrate Integration Technology for Gallium Oxide

作　　者：瞿振宇 徐文慧 江昊东 梁恒硕 赵天成 谢银飞 孙华锐 邹新波 游天桂[1] 齐红基[4,5] 韩根全 欧欣[1] QU Zhenyu;XU Wenhui;JIANG Haodong;LIANG Hengshuo;ZHAO Tiancheng;XIE Yinfei;SUN Huarui;ZOU Xinbo;YOU Tiangui;QI Hongji;HAN Genquan;OU Xin(State Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China;Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System,Harbin Institute of Technology,Shenzhen,Shenzhen 518055,China;Advanced Laser and Optoelectronic Functional Materials Department,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Hangzhou Institute of Optics and Fine Mechanics,Hangzhou 311421,China;School of Microelectronics,Xidian University,Xi’an 710071,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所,集成电路材料全国重点实验室,上海200050 [2]上海科技大学信息科学与技术学院,上海201210 [3]哈尔滨工业大学(深圳),微纳光电信息系统理论与技术工业和信息化部重点实验室,深圳518055 [4]中国科学院上海光学精密机械研究所,强激光材料重点实验室,上海201800 [5]杭州光学精密机械研究所,杭州311421 [6]西安电子科技大学微电子学院,西安710071

出　　处：《人工晶体学报》2025年第3期470-490,共21页Journal of Synthetic Crystals

基　　金：上海市战略前沿项目(24DP1500100);国家自然科学基金(62404236,62293520,62293521)。

摘　　要：超宽禁带氧化镓在高功率和射频器件领域显示出巨大发展潜力。然而,氧化镓固有的极低热导率和p型掺杂困难问题限制了其器件性能和结构设计。异质集成是突破单一材料性能极限,变革提升器件性能的关键技术。本文综述了异质外延、机械剥离和离子束剥离转移三种氧化镓异质集成技术的最新研究进展,重点对比分析不同集成技术在材料质量、电学和热学特性及器件性能等方面的优缺点,并针对衬底种类、界面成键方式、过渡层厚度对纵向散热和电子输运的影响进行探讨。同时,本文对当前氧化镓异质集成技术所面临的挑战进行分析,并对氧化镓异质集成技术未来的发展趋势进行展望,旨在唤起国内氧化镓异质集成衬底相关研究,推动氧化镓异质集成器件开发,加快推进氧化镓材料和器件产业化应用。As a wide-bandgap semiconductor,β-Ga_(2)O_(3) holds immense promise for high-power and radio frequency devices.However,its inherently low thermal conductivity and difficulties in p-type doping hinder its device performance and structural design.Heterogeneous integration has emerged as a critical technology to overcome the limitations of single materials and revolutionize device performance.This review summarizes the latest research progress in three heterogeneous integration techniques forβ-Ga_(2)O_(3)∶heteroepitaxy,mechanical exfoliation,and ion-cutting technique.The advantages and disadvantages of different integration techniques in terms of material quality,electrical and thermal properties,and device performance are comparatively analyzed.Additionally,the effects of substrate types,interfacial bonding,and interface layer thickness on heat dissipation and vertical electron transport are discussed.This review also analyzes the current challenges faced byβ-Ga_(2)O_(3) heterogeneous integration technology and prospects its future development trends,aiming to stimulate domestic research onβ-Ga_(2)O_(3) heterogeneous integrated substrates,promote the development ofβ-Ga_(2)O_(3) heterogeneous integrated devices,and accelerate the industrialization ofβ-Ga_(2)O_(3) materials and devices.

关 键 词：氧化镓 异质衬底集成 异质外延 机械剥离 离子束剥离转移 热管理 

分 类 号：O472[理学—半导体物理]