电容式压力传感器的设计和仿真分析  

Design and simulation analysis of the capacitive pressure sensor

作　　者：曹海燕 王慧慧 赵鹤然 孙晓东 张颖 CAO Haiyan;WANG Huihui;ZHAO Heran;SUN Xiaodong;ZHANG Ying(School of Intelligence&Electronic Engineering,Dalian Neusoft University of Information,Dalian 116023,China;The 47th Research Institute,China Electronics Technology Group Corporation,Shenyang 110136,China)

机构地区：[1]大连东软信息学院智能与电子工程学院,辽宁大连116023 [2]中国电子科技集团公司第四十七研究所,辽宁沈阳110136

出　　处：《传感器与微系统》2025年第4期88-91,共4页Transducer and Microsystem Technologies

基　　金：辽宁省高等学校基本科研项目(LJKQZ2021189)。

摘　　要：对微器件中应用较广泛的一种电容式MEMS压力传感器的结构进行了优化设计,提出了一种新型的电容式压力传感器设计方案,使MEMS结构与互补金属氧化物半导体(CMOS)工艺兼容。通过Ansys软件建立模型并进行仿真分析,结果表明:传感器的性能与敏感膜的形状和尺寸有关系。在所研究的结构参数范围内,1200μm方形膜结构的压力传感器的灵敏度可达到218.89 pF/MPa,而且高压范围内的灵敏度和线性度较低压范围的好。该结构的传感器工艺流程简易,仿真研究结果为电容式压力传感器的设计和应用提供了基础依据。The optimal design of structure of capacitive MEMS pressure sensor,one of the most widely used microdevices is conducted.A new design scheme of capacitive pressure sensor is proposed which makes MEMS structure compatible with CMOS technology.Ansys is used to build model and conduct simulated analysis.The results show that the performance of the sensor is related to the shape and size of the sensitive membrane.The sensitivity of the 1200μm square membrane pressure sensor can reach 218.89 pF/MPa in the range of studied structural parameters.Moreover,the sensitivity and linearity in the high pressure range are better than that in the low pressure range.This sensor process of the structure is simple.The simulation results provide a theoretical basis for the design and application of capacitive pressure sensor.

关 键 词：电容式压力传感器 互补金属氧化物半导体工艺 ANSYS软件 敏感膜 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]