基于N型GaAs的肖特基β辐伏电池换能单元制备分析  

Analysis of the Preparation of Schottky β-Radiation Battery Converter Unit Based on N-type GaAs

作　　者：沈鑫 邹继军[1] 宋亚龙 邹启泰 SHEN Xin;ZOU Jijun;SONG Yalong;ZOU Qitai(School of Mechanical and Electronic Engineering,Donghua University of Technology,Jiangxi 330013,China.)

机构地区：[1]东华理工大学机械与电子工程学院,江西330013

出　　处：《电子技术(上海)》2025年第1期348-349,共2页Electronic Technology

摘　　要：阐述从肖特基结型β辐伏电池换能单元的角度出发,基于第二代半导体GaAs材料优异的载流子迁移率、抗辐照性能以及生产工艺成熟的特性,选用N型GaAs衬底作为半导体换能单元材料,并采用Au作为肖特基接触金属。通过光刻、金属薄膜沉积和剥离工艺,制备得到Au-GaAs肖特基结型换能单元。在200℃、N2氛围下退火5min后,换能单元的漏电流性能较退火前显著下降。在白光源模拟辐照条件下测试,换能单元输出了0.20V的开路电压和0.74μA的短路电流,最大功率达到0.063μW,填充因子为42.4%。This paper describes the perspective of the Schottky junction type beta radiation battery energy conversion unit.Based on the excellent carrier mobility,radiation resistance,and mature production process characteristics of second-generation semiconductor GaAs materials,an N-type GaAs substrate is selected as the semiconductor energy conversion unit material,and Au is used as the Schottky contact metal.It prepares Au GaAs Schottky junction transducer units through photolithography,metal thin film deposition,and exfoliation processes.After annealing at 2oo℃and N2 atmosphere for 5 minutes,the leakage current performance of the transducer unit significantly decreased compared to before annealing.Under simulated irradiation conditions with a white light source,the transducer unit output an open circuit voltage of o.2o V and a short-circuit current of o.74μA,with a maximum power of 0.06 3μ W and a fill factor of 42.4%.

关 键 词：半导体工艺 GAAS 肖特基结型换能单元 

分 类 号：TN30[电子电信—物理电子学] TM918[电气工程—电力电子与电力传动]