19~21 GHz GaAs高线性功率放大器MMIC  

19~21 GHz GaAs high linearity power amplifier MMIC

作　　者：刘晓禹 韩程浩 阮文武 郭润楠 刘伶 许鑫东 侯泽文 庄园 余旭明[1] 陶洪琪[1,2] Liu Xiaoyu;Han Chenghao;Ruan Wenwu;Guo Runnan;Liu Ling;Xu Xindong;Hou Zewen;Zhuang Yuan;Yu Xuming;Tao Hongqi(Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,江苏南京210016 [2]固态微波器件与电路全国重点实验室,江苏南京210016

出　　处：《电子技术应用》2025年第4期72-78,共7页Application of Electronic Technique

摘　　要：基于0.15μm GaAs高电子迁移率晶体管(pHEMT)工艺研制了一款19~21 GHz的高线性功率放大器单片微波集成电路。高峰均比信号传输场景中,功率放大器的效率和线性度对射频前端性能具有关键影响。该放大器在功放栅极级联冷模线性化电路,以补偿放大器辐相失真特性,进而实现线性度和效率的提升,为克服冷模对电压敏感问题,采用片上有源稳压及温度补偿偏置电路扩展动态范围,降低大动态失真,抑制工艺离散、外部离散等带来的线性度恶化问题。测试结果表明,在19~21 GHz频带内,饱和输出功率为22.3~22.8 dBm,饱和功率附加效率为35.3%~36.5%。在19GHz、20GHz和21GHz频点,输出功率19dBm时,三阶互调失真均小于-30dBc;6dB峰均比、100MHz正交频分多路复用的64-QAM调制信号激励下,平均输出功率及对应的功率附加效率为19 dBm和27%,实现了-31.9 dBc、-33.2 dBc和-31.2 dBc的邻道功率比及4.32%、4.13%和5.3%的误差矢量幅度。Based on a technology of 0.15μm GaAs high electron mobility transistor(pHEMT),a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper.In the scenario of signal transmission with high peak-to average power ratio(PAPR),the efficiency and linearity of power amplifier(PA)have a critical impact on RF front-end performance.The amplifier incorporates a cold-mode linearization circuit cascaded at the power amplifier gate to compensate for the amplifier's phase distortion characteristics,thereby enhancing linearity and efficiency.To address the voltage sensitivity issue of the cold mode,an on-chip active voltage stabilization and temperature compensation bias circuit is employed to expand the dynamic range,reduce large dynamic distortion,and mitigate the deterioration of linearity caused by process variations and external discreteness.The room temperature measured results demonstrate that the achieved saturated output power of 22.3~22.8 dBm with 35.3%~36.5%saturated power-added efficiency(PAE)between 19 GHz and 21 GHz.Especially,the measured IMD3 at 19 GHz,20 GHz and 21 GHz is below-30 dBc with an output power level of 19 dBm.For a 64-QAM orthogonal frequency division multiplexing signal with 6 dB peak-to-average power ratio and 100 MHz bandwidth,the PA exhibits an adjacent channel power ratio of-31.9 dBc、-33.2 dBc and-31.2 dBc when the error vector magnitude are 4.32%、4.13%and 5.3%.

关 键 词：自适应稳压偏置 冷模 高线性 砷化镓 

分 类 号：TN492[电子电信—微电子学与固体电子学] TN722.7.5