High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure  

作　　者：Can GONG Minhan MI Yuwei ZHOU Pengfei WANG Hanzhen LI Xinyi WEN Ting MENG Sirui AN Xiang DU Kai CHENG Meng ZHANG Qing ZHU Xiaohua MA Yue HAO 

机构地区：[1]State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi’an 710071,China [2]Enkris Semiconductor Inc.,Suzhou 215123,China

出　　处：《Science China(Information Sciences)》2025年第4期391-392,共2页中国科学(信息科学)(英文版)

基　　金：supported by National Key Research and Development Project of China(Grant No.2023YFB3609604);Key R&D Program of Guangzhou(Grant No.202103020002);Fundamental Research Funds for the Central Universities(Grant No.YJSJ24020);ZTE IndustryUniversity-Institute Cooperation Funds(Grant No.HC-CN-20220708005)。

摘　　要：GaN-based high-electron-mobility transistors(HEMTs)have found extensive applications in defense,aerospace,and civilian communications[1,2].However,with the increase of gate voltage(VGS),the transconductance(Gm)of the device exhibits a decline after reaching its peak value,and the cut-off frequency(fT/fMAX)follows a similar trend as Gm.This phenomenon can result in significant signal distortion at the device level[3].Therefore,it becomes crucial to mitigate the rapid decrease in Gm at high drain current.

关 键 词：signal distortion three dimensional gated modulation cut off frequency GM gan hemt TRANSCONDUCTANCE nanowire channel high linearity 

分 类 号：TN386[电子电信—物理电子学]