supported by National Key Research and Development Project of China(Grant No.2023YFB3609604);Key R&D Program of Guangzhou(Grant No.202103020002);Fundamental Research Funds for the Central Universities(Grant No.YJSJ24020);ZTE IndustryUniversity-Institute Cooperation Funds(Grant No.HC-CN-20220708005)。
GaN-based high-electron-mobility transistors(HEMTs)have found extensive applications in defense,aerospace,and civilian communications[1,2].However,with the increase of gate voltage(VGS),the transconductance(Gm)of the ...