氧化镓射频器件研究进展  

Research Progress on Ga2O3 Radio Frequency Devices

作　　者：郁鑫鑫 沈睿[1,2,3] 谯兵 李忠辉 叶建东 孔月婵[2,3] 陈堂胜[2,3] YU Xinxin;SHEN Rui;QIAO Bing;LI Zhonghui;YE Jiandong;KONG Yuechan;CHEN Tangsheng(CETC Key Laboratory of Carbon?based Electronics,Nanjing,210016,CHN;Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid?state Microwave Devices and Circuits,Nanjing,210016,CHN;School of Electronic Science and Engineering,Nanjing University,Nanjing,210023,CHN)

机构地区：[1]中国电科碳基电子重点实验室,南京210016 [2]南京电子器件研究所,南京210016 [3]固态微波器件与电路全国重点实验室,南京210016 [4]南京大学电子科学与工程学院,南京210023

出　　处：《固体电子学研究与进展》2025年第2期1-11,共11页Research & Progress of SSE

基　　金：国家重点研发计划资助项目(2022YFB3605504)。

摘　　要：氧化镓(Ga_(2)O_(3))是性能优异的超宽禁带半导体材料,不仅临界击穿场强大、饱和速度高,而且具有极高的巴利加优值和约翰逊优值,在功率和射频器件领域具有重要的应用前景。本文聚焦于Ga_(2)O_(3)射频器件,首先介绍了Ga_(2)O_(3)在射频器件领域的优势和面临的挑战,然后综述了近年来Ga_(2)O_(3)射频器件在体掺杂沟道、AlGaO/Ga_(2)O_(3)调制掺杂异质结以及与高导热衬底异质集成方面取得的进展,并对研究结果进行了讨论,最后展望了未来Ga_(2)O_(3)射频器件的发展前景。Gallium oxide(Ga_(2)O_(3))is an ultra-wide bandgap semiconductor material with excellent performance,which not only has large critical breakdown electrical field and high saturation velocity,but also has extremely high Baliga's and Johnson's figure of merits,which makes it of important application prospects in the field of power and radio frequency(RF)devices.This paper focuses on Ga_(2)O_(3) RF devices.The advantages and challenges of Ga_(2)O_(3) in the field of RF devices were introduced.And then the progress made in bulk doped channels,AlGaO/Ga_(2)O_(3) modulation doped heterojunctions,as well as hetero-integrating with high thermal conductivity substrates in recent years were reviewed and their research results were discussed.Finally,the development prospects of Ga_(2)O_(3) RF devices in the future were expected.

关 键 词：氧化镓 超宽禁带 射频器件 

分 类 号：TN385[电子电信—物理电子学] TN386.1