耗尽型GaN非易失性存储器的研究  

Study on Depletion Mode GaN Nonvolatile Memory

作　　者：邵国键 陈韬[1] 周书同 李信[1] SHAO Guojian;CHEN Tao;ZHOU Shutong;LI Xin(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2025年第2期12-15,共4页Research & Progress of SSE

摘　　要：研究了基于SiO_(2)/SiN/AlGaN/GaN结构的耗尽型GaN非易失性存储器,该存储器中SiN介质层作为电荷存储层,SiO_(2)层作为隔离层。通过在栅极施加正压实现存储器的写入模式,将电子引入SiN电荷存储层。而栅极施加负压则能实现存储器的擦除模式,清除SiN电荷存储层中的电子,存储器恢复至初始状态。在经历10~4次循环擦写、10~4 s数据保持等可靠性验证后,GaN存储器依然保持了足够的窗口。The depletion mode GaN nonvolatile memory based on the SiO_(2)/SiN/AlGaN/GaN structure was investigated in this paper.The SiN dielectric layer and SiO_(2) layer were set as the charging storage layer and isolation layer,respectively.By applying a positive voltage to the gate,the memory enters the program mode,and electrons are introduced into the charging storage layer.Conversely,when a negative voltage is applied to the gate,the memory enters the erase mode,and the charging storage layer is cleared,returning the memory to its initial state.After reliability verifications,such as 104 cycles of program/erase and 104 seconds of data retention,the memory still maintains sufficient window capacity.

关 键 词：氮化镓高电子迁移率晶体管 耗尽型GaN非易失性存储器 擦除模式 写入模式 循环特性 保持特性 

分 类 号：TN386[电子电信—物理电子学]