阳极退火对Co阳极准垂直结构GaN基肖特基二极管性能影响  

Effect of Anode Annealing on the Performance of Co Anode Quasi‑vertical GaN Based Schottky Barrier Diodes

作　　者：吴志勇 马群 王良臣[1,2] 李晋闽 王军喜[1,2] 刘志强 伊晓燕[1,2] WU Zhiyong;MA Qun;WANG Liangchen;LI Jinmin;WANG Junxi;LIU Zhiqiang;YI Xiaoyan(Research and Development Center for Wide Bandgap Semiconductors,Institute of Semiconductors,Chinese Academy of Sciences,Beijing,100083,CHN;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,100049,CHN)

机构地区：[1]中国科学院半导体研究所宽禁带半导体研发中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《固体电子学研究与进展》2025年第2期86-91,共6页Research & Progress of SSE

摘　　要：在蓝宝石衬底上制备了不同阳极叉指宽度的钴(Co)阳极准垂直结构氮化镓肖特基势垒二极管(GaN Schottky barrier diode, GaN SBD),在此基础上分别进行300、350、400℃阳极退火。实验结果显示较小的阳极叉指宽度有利于实现较低的比导通电阻,在300℃退火后,阳极界面态密度降低,金属半接触均匀性增加,器件的开启电压和比导通电阻分别降低12.1%和13.2%,阳极界面态密度降低,反向3 V下的漏电流密度降低近一个数量级,击穿电压从89 V提高到97 V;随着退火温度的上升,器件肖特基特性逐渐减弱。综合结果表明300℃阳极退火能够有效改善Co阳极GaN SBD的性能。In this work,the Cobalt(Co)anode quasi‑vertical GaN Schottky barrier diode(GaN SBD)with different anode finger widths were fabricated on sapphire substrate,and then subjected to anode annealing at 300,350,400℃respectively.The experimental results show that a smaller anode finger width is beneficial for achieving lower specific on‑resistance.After annealing at 300℃,anode interface states decrease and the uniformity of metal‑semiconductor contact increases,the turn‑on voltage and specific on‑resistance of the device decrease by 12.1%and 13.2%,respectively.In addition,the leakage current density at reverse 3 V decreases by nearly an order of magnitude,the breakdown voltage increases from 89 V to 97 V.As the annealing temperature increases,the Schottky characteristics of the device gradually weaken.The comprehensive results indicate that annealing at 300℃can effectively improve the performance of Co anode GaN SBD.

关 键 词：肖特基二极管 阳极退火 氮化镓 准垂直 

分 类 号：TN311.8[电子电信—物理电子学]