功率器件银电化学迁移分析与改善  

Analysis and Alleviation of Silver Electrochemical Migration in Power Devices

作　　者：邱志述 胡敏 QIU Zhishu;HU Min(Leshan Radio Company,Ltd.,Leshan 614000,China)

机构地区：[1]乐山无线电股份有限公司,四川乐山614000

出　　处：《电子与封装》2025年第4期1-4,共4页Electronics & Packaging

摘　　要：银作为可焊接金属,与铅、锡等形成低温合金可显著提升工艺适应性,广泛应用于半导体功率器件领域。芯片金属与封装互连中银电化学迁移常导致器件短路,以致失效。为了减少这类失效,对银电化学迁移机理进行研究,并从芯片、封装方面给出改善措施。增加芯片保护层、减少封装环氧树脂和芯片的分层可以减少水汽对芯片表面的侵蚀,是改善银电化学迁移的关键。Silver,as a weldable metal,can significantly improve process adaptability by forming low-temperature alloys with Pb,Sn and other materials,and is widely used in the field of semiconductor power devices.The electrochemical migration of silver in the interconnection between chip metal and packaging often leads to short-circuiting of the device,resulting in failure.In order to reduce such failures,the mechanism of silver electrochemical migration is studied,and improvement measures are proposed from the aspects of chip and packaging.Adding a protective layer of the chip and reducing the delamination of package epoxy resin and chip can reduce the erosion of water vapor on the chip surface,which is the key to alleviating silver electrochemical migration.

关 键 词：银电化学迁移 半导体功率器件 芯片金属 铅锡可焊接金属 

分 类 号：TG425.1[金属学及工艺—焊接] TN407[电子电信—微电子学与固体电子学]