室温晶圆键合的金刚石基GaN HEMT制备与性能  

Fabrication and Performance of Room-Temperature Wafer-Bonded GaN-on-Diamond HEMTs

作　　者：张栋曜 周幸叶 郭红雨[1,2] 余浩 吕元杰 冯志红[1,2] Zhang Dongyao;Zhou Xingye;Guo Hongyu;Yu Hao;LüYuanjie;Feng Zhihong(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]固态微波器件与电路全国重点实验室,石家庄050051

出　　处：《半导体技术》2025年第5期468-472,共5页Semiconductor Technology

基　　金：国家重点研发计划项目(2022YFB3404304)。

摘　　要：GaN作为第三代宽禁带半导体材料,具有较大的自发极化系数和压电系数,可承受高功率密度,适用于高频、高温、大功率器件。随着GaN高电子迁移率晶体管(HEMT)向小型化、大功率发展,散热问题已成为制约GaN功率器件性能提升的重要因素。高热导率(2000 W·m^(-1)·K^(-1))金刚石是一种极具竞争力的新型散热材料,在解决大功率器件的散热问题方面极具潜力。针对散热问题,采用室温晶圆键合工艺制备了金刚石基GaN HEMT,并对其进行了直流特性、微波功率特性和结温测试。与传统SiC基GaN HEMT相比,金刚石基GaN HEMT的漏源饱和输出电流增大了约5%,热阻从5.04 K·mm/W降低至3.78 K·mm/W,有利于提升器件性能、延长器件寿命。本文研究结果为突破GaN功率器件性能的发展瓶颈提供了实验基础。As the third generation semiconductor material with wide band-gap,GaN possesses high spontaneous polarization coefficient and piezoelectric constant and can bear high power density,so it is suitable for high-frequency,high-temperature and high-power devices.With the development of GaN high electron mobility transistors(HEMTs)towards miniaturization and high power,heat consumption has become an important factor restricting the performance improvement of power devices.High thermal conductivity(2000 W·m^(-1)·K^(-1))diamond is a competitive heat dissipation material with great potential for solving the heat dissipation problem of high-power devices.To address the heat dissipation problem,GaN-on-diamond HEMTs were fabricated by wafer bonding process at room temperature.The DC characteristics,microwave power characteristics and junction temperature of HEMTs were measured.Compared with conventional GaN-on-SiC HEMTs,the drain-source saturation output current of the GaNon-diamond HEMT increases by about 5%,and the thermal resistance is reduced from 5.04 K·mm/W to 3.78 K·mm/W,which is conducive to improving the performance of the device and extending the life of the device.The research results provide an experimental basis for breaking the development bottleneck of GaN power devices.

关 键 词：GAN 金刚石 微波功率 结温 散热能力 

分 类 号：TN323.4[电子电信—物理电子学] TN305.94