基于衬底台阶调控技术的高质量GaN生长  

High Quality GaN Growth Based on Substrate Step Control Technology

作　　者：高楠 房玉龙[1] 王波[1] 张志荣[1] 尹甲运[1] 韩颖[1] 刘超[2] Gao Nan;Fang Yulong;Wang Bo;Zhang Zhirong;Yin Jiayun;Han Ying;Liu Chao(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;School of Integrated Circuits,Shandong University,Jinan 250000,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]山东大学集成电路学院,济南250000

出　　处：《半导体技术》2025年第5期481-487,共7页Semiconductor Technology

摘　　要：GaN晶体质量提升对材料及器件性能优化至关重要。通过金属有机物化学气相沉积(MOCVD)在SiC衬底上对GaN晶体质量进行了实验研究。对比了高温H,刻蚀与高温HCl刻蚀对衬底台阶的影响,并对后续生长的AIN和GaN晶体质量进行了表征,发现增加衬底台阶宽度有助于降低半高宽(FWHM)。采用不同表面预处理条件进行材料生长,发现氨气/三甲基铝(NH_(3)/TMAI)交替预处理对台阶有修饰作用,有助于降低GaN(002)晶面X射线衍射(XRD)峰FWHM,对(102)晶面XRD峰FWHM影响较小。最后讨论了AIN生长温度对GaN晶体质量的影响,发现AIN和GaN晶体质量均随温度升高而提高。综合各条件生长得到的GaN(002)晶面XRD峰FWHM为58.5arcsec的GaN外延层,该FWHM为目前已知最低值,该样品GaN(102)晶面XRD峰FWHM为104.9arcsec。Improving the quality of GaN crystals is crucial for optimizing material and device performance.The GaN crystal quality was experimentally studied by metal-organic chemical vapor deposition(MOCVD)on SiC substrates.The effects of high-temperature etching with H,and high-temperature etching with HCl on substrate steps were compared,and the quality of subsequently grown AIN and GaN crystals was characterized,then it was found that increasing the width of the substrate steps could help to reduce the full width at half maximum(FWHM).The material growth was carried out under different surface pretreatment conditions.It is found that alternating ammonia/trimethylaluminum(NH_(3)/TMAl)pretreatment has a modifying effect on the steps,which helps to reduce the X-ray diffraction(XRD)peak FWHM of the GaN(002)crystal plane,but has no significant effect on the XRD peak FWHM of the(102)crystal plane.Finally,the effect of AIN growth temperature on the quality of GaN crystals was discussed.It is found that both AIN crystal quality and GaN crystal quality become better with increasing temperature.Combined with various conditions,the GaN epitaxial layer with an XRD peak FWHM of 58.5 arcsec in the GaN(002)crystal plane was grown,which was the lowest known value.The XRD peak FWHM of GaN(102)crystal plane was 104.9 arcsec for the sample.

关 键 词：金属有机物化学气相沉积(MOCVD) GAN 衬底台阶 高温刻蚀 半高宽(FWHM) 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054