高精确度大比特位延时器芯片研制  

Design of high-accuracy and megabit True-Time Delay chip

作　　者：陈月盈[1] 刘帅[1] 杨柳[1] 赵子润 CHEN Yueying;LIU Shuai;YANG Liu;ZHAO Zirun(The 13th Research Institute of CETC,Shijiazhuang Hebei 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《太赫兹科学与电子信息学报》2025年第4期340-345,359,共7页Journal of Terahertz Science and Electronic Information Technology

摘　　要：基于GaAs衬底增强/耗尽型赝配高电子迁移率晶体管(E/D pHEMT)工艺,研制了一款0.5~6 GHz三位可调1400 ps数控延时器芯片。芯片尺寸为3.60 mm×4.00 mm×0.07 mm,集成了3位数控延时器和3 bit并口驱动电路。在0.5~6 GHz范围内,该数控延时器芯片插入损耗小于11 dB,插损波动小于±0.5 dB,全态输入输出驻波比(VSWR)均小于1.5,1400 ps延时误差片内可调为±4 ps,延时量达到ns级别;通过增加可调节单元和键合切断方式,将延时精确度提高至3‰。该芯片具有宽带、高精确度、大延时量和小尺寸性能,可更好地用于天线系统中。Based on the GaAs substrate Enhanced/Depletion-mode pseudomorphic High Electron Mobility Transistor(E/D pHEMT)process,a three-bit adjustable 1400 ps Digital-Controlled Delay(DCD)chip operating in the 0.5~6 GHz frequency range has been developed.The chip measures 3.60 mm×4.00 mm×0.07 mm and integrates a three-bit digital-controlled delay line and a 3-bit parallel port drive circuit.Within the 0.5~6 GHz range,the DCD chip exhibits insertion loss of less than 11 dB,with insertion loss variation of less than±0.5 dB.The Voltage Standing Wave Ratio(VSWR)for both input and output is less than 1.5 across all states.The 1400 ps delay error can be internally adjusted to±4 ps,achieving a delay quantity at the nanosecond level.By incorporating additional adjustable units and bonding cut-off methods,the delay accuracy is enhanced to 3‰.The chip features broadband operation,high precision,large delay quantity,and a compact size,making it well-suited for applications in antenna systems.

关 键 词：宽带 大延时量 砷化镓 高精确度 微波单片集成电路(MMIC) 

分 类 号：TN914.42[电子电信—通信与信息系统]