4英寸高质量GaN单晶衬底制备  

Preparation of 4-Inch High-Quality GaN Single Crystal Substrates

作　　者：齐占国 王守志 李秋波[1] 王忠新 邵慧慧[1] 刘磊[1] 王国栋[1] 孙德福[1] 于汇东 蒋铠泽 张爽[1] 陈秀芳[1] 徐现刚[1] 张雷[1,2] QI Zhanguo;WANG Shouzhi;LI Qiubo;WANG Zhongxin;SHAO Huihui;LIU Lei;WANG Guodong;SUN Defu;YU Huidong;JIANG Kaize;ZHANG Shuang;CHEN Xiufang;XU Xiangang;ZHANG Lei(State Key Laboratory of Crystal Materials,Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;Shandong Crystal GaN Semiconductor Co.,Ltd.,Jinan 250100,China)

机构地区：[1]山东大学,新一代半导体材料研究院,晶体材料全国重点实验室,济南250100 [2]山东晶镓半导体有限公司,济南250100

出　　处：《人工晶体学报》2025年第4期717-720,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金重点项目(62434010,52472010)。

摘　　要：本研究结合多孔衬底技术和应力调控策略,成功突破异质外延GaN单晶生长中的位错延伸与应力控制难题,制备出直径4英寸(1英寸=2.54 cm)的高质量GaN单晶。经切割、倒角、研磨及化学机械抛光等加工后,获得厚度500μm的无损伤、超光滑4英寸自支撑GaN单晶衬底。该衬底兼具优异的结晶质量与出色的力学稳定性,表面无裂纹,应力分布均匀;阴极荧光光谱(CL)表征位错密度为9.6×10^(5)cm^(-2),高分辨X射线衍射(HRXRD)(002)面摇摆曲线半峰全宽低至57.91″;原子力显微镜(AFM)测得表面粗糙度Ra<0.2 nm,呈现原子级平整表面。制备的衬底开盒即用,能够满足蓝绿激光器及电力电子器件的需求。In this study,the porous substrate and stress control techniques were adopted to successfully break through the dislocation suppression and stress control problems in the growth of heterogeneous epitaxial GaN single crystals,and high-quality GaN single crystals with a diameter of 4-inch were prepared.After cutting,chamfering,grinding,and chemical-mechanical polishing,a damage-free,ultra-smooth 4-inch self-separating GaN single crystal substrate with a thickness of 500μm was obtained.The substrate has both excellent crystalline quality and mechanical stability,with uniform surface color,no cracking phenomenon,and uniform stress distribution;cathodoluminescence spectroscopy(CL)measurements reveal a dislocation density of 9.6×10^(5)cm^(-2),and the rocking curve of high-resolution X-ray diffraction(HRXRD)(002)is as low as 57.91″;the surface roughness Ra<0.2 nm measured by atomic force microscope(AFM),presenting atomic-level flat surface.The as-prepared substrate is ready-to-use,meeting the requirements for blue/green laser diodes and power electronic devices.

关 键 词：GaN单晶衬底 4英寸 氢化物气相外延 晶体生长 晶体加工 

分 类 号：O734[理学—晶体学]