脂肪醇聚氧乙烯醚对铝栅CMP中铝和多晶硅去除速率选择比的影响  

Influence of Fatty Alcohol Polyoxyethylene Ether on the Selection Ratio of Aluminum and Polysilicon Removal Rate in Aluminum Gate

作　　者：曹钰伟 王胜利 罗翀[1,2] 王辰伟 张国林 梁斌[1,2] 杨云点 盛媛慧 CAO Yuwei;WANG Shengli;UO Chong;WANG Chenwei;ZHANG Guolin;LIANG Bin;YANG Yundian;SHENG Yuanhui(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China;Semiconductor Technology Innovation Center(Beijing)Corporation,Beijing 100176,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北工业大学天津市电子材料与器件重点实验室,天津300130 [3]北方集成电路技术创新中心(北京)有有限公司,北京100176

出　　处：《润滑与密封》2025年第4期73-79,共7页Lubrication Engineering

基　　金：河北省自然科学基金项目(E2019202367)。

摘　　要：为了提高高K金属栅结构(HKMG)化学机械拋光(CMP)中铝和多晶硅去除速率选择比,研究酸性环境下(pH=5)非离子表面活性剂脂肪醇聚氧乙烯醚(AEO9)对铝和多晶硅去除速率选择比的影响,并探究其作用机制。研究发现,AEO9质量分数为0.01%时,铝和多晶硅的速率选择比最高,达到了3.8,并且改善了铝和多晶硅的CMP后的表面质量,表面粗糙度分别为0.756、0.324 nm。电化学、XPS、接触角、表面张力表征结果表明,表面活性剂AEO9可以在被抛材料Al和多晶硅晶圆表面形成致密的吸附膜,从而通过影响抛光中的机械摩擦作用和化学作用,使抛光材料去除速率减小,并减小了Al和多晶硅晶圆表面的粗糙度。To enhance the selectivity ratio of aluminum(Al)and polysilicon removal rates in the chemical mechanical polishing(CMP)of high-K metal gate(HKMG)structure,the influence of non-ionic surfactant fatty alcohol polyoxyethylene ether(AEO9)on the selectivity ratio of Al and polysilicon removal rates under acidic conditions(pH=5)was investigated.The mechanism of action was also explored.The research reveals that at an AEO9 mass fraction of 0.01%,the selectivity ratio of Al and polysilicon reaches the maximum of 3.8,and the surface quality of aluminum and polysilicon after CMP is improved,with surface roughness of 0.756 nm and 0.324 nm,respectively.The characterization results of electrochemistry,XPS,contact angle,and surface tension indicate that the surfactant AEO9 can form a dense adsorption film on the polished surfaces of Al and polysilicon wafers,thereby reducing the removal rate of the polishing material and decreasing the roughness of the Al and polysilicon wafer surfaces by affecting the mechanical friction and chemical reactions during polishing.

关 键 词：高K金属栅结构 化学机械拋光 脂肪醇聚氧乙烯醚 去除速率 多晶硅 

分 类 号：TH117.1[机械工程—机械设计及理论] TG175[金属学及工艺—金属表面处理]