聚乙烯醇对单晶硅精抛的影响  

Effect of Polyvinyl Alcohol on Fine Polishing of Monocrystalline Silicol

作　　者：王雪洁 王辰伟 罗翀[1,2] 周建伟 陈志博 杨啸[1,2] 刘德正 WANG Xuejie;WANG Chenwei;LUO Chong;ZHOU Jianwei;CHEN Zhibo;YANG Xiao;LIU Dezheng(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北工业大学天津市电子材料与器件重点实验室,天津300130

出　　处：《润滑与密封》2025年第4期144-150,共7页Lubrication Engineering

基　　金：河北省自然科学基金项目(E2019202367)。

摘　　要：针对单晶硅精抛后存在沾污等缺陷,目前采用的高分子聚合物添加剂存在泡沫多或是大幅度影响去除速率等问题,选取高分子聚合物聚乙烯醇(polyvinyl alcohol,PVA)作为抛光液添加剂。在SiO2磨料质量分数为0.5%且抛光液pH为10.5的条件下,研究不同质量分数的PVA对单晶硅(Si)精抛的影响,并通过拉曼光谱、XPS分析PVA的吸附方式及其作用机制。大颗粒粒度仪、接触角测量仪以及AFM和SEM分析结果表明,单晶硅精抛光液中加入PVA可以提高抛光液的润湿性,降低硅表面的颗粒沾污,提高抛光后的表面质量;拉曼光谱、XPS表征结果表明,抛光液中加入PVA会生成更多的Si-OH,保护了Si表面,减少了Si表面的颗粒数量,改善了硅表面的表面质量;在单晶硅精抛光液中加入PVA,可以满足集成电路单晶硅CMP精抛的去除速率的要求,并且能够大幅降低硅表面的颗粒沾污;当PVA质量分数为0.15%时,单晶硅精抛的去除速率为210 nm/min且抛光后的表面颗粒数量下降95%以上,具有较好的表面质量(Sq=0.326 nm)。In view of the contamination and other defects of monocrystalline silicon after fine polishing,and the problems such as too much foam or large influence on removal rate of polymer additives currently used,the polymer polyvinyl alcohol(PVA)was selected as the polishing slurry additive.The effect of different mass fraction of PVA on the fine polishing of monocrystalline silicon(Si)was studied under the condition that the mass fraction of SiO2 was 0.5%and the pH of the polishing slurry was 10.5.The adsorption mode and mechanism of PVA were analyzed by Raman spectroscopy and XPS characterization.The results of large particle size analyzer,contact angle measuring instrument,AFM and SEM analysis show that the addition of PVA can improve the wettability of the polishing slurry,reduce the particle contamination on the silicon surface and improve the surface quality after polishing.The Raman spectroscopy and XPS characterization results indicate that the addition of PVA to the polishing slurry generates more Si-OH,which protects the Si surface,reduces the number of particles on the Si surface,and improves the surface quality of the Si surface.Adding PVA to the polishing slurry for monocrystalline silicon can meet the removal rate requirements of CMP polishing for integrated circuit monocrystalline silicon and significantly reduce particle contamination on the silicon surface.When the mass fraction of PVA is 0.15%,the removal rate of monocrystalline silicon fine polishing is 210 nm/min and the number of particles on the polished surface is reduced by 95%,and the monocrystalline silicon has a good surface quality of 0.326 nm.

关 键 词：单晶硅 化学机械抛光 颗粒沾污 表面质量 去除速率 

分 类 号：TH117.1[机械工程—机械设计及理论] TG175[金属学及工艺—金属表面处理]