半磁半导体材料GaMnAs  

Semimagnetic Semiconductor GaMnAs

作　　者：刘芳芳[1] 杨瑞霞[1] 刘立浩[1] 申华军[1] 

机构地区：[1]河北工业大学信息学院,天津300130

出　　处：《河北工业大学学报》2002年第6期35-42,共8页Journal of Hebei University of Technology

基　　金：天津市自然科学基金资助项目(023801444);河北省自然科学基金资助项目(601048)

摘　　要：利用低温分子束外延技术(LT-MBE)制备的GaMnAs是一种新型的半磁半导体材料(DMS),它兼有磁性材料和半导体化合物的特点.系统地介绍了GaMnAs材料的结构、制备、居里温度、磁畴、磁矩、磁性质及几种多层异质结构,并对GaMnAs材料的应用、现状及前景作了简单的概括与分析.GaMnAs is a kind of new Semimagnetic Semiconductor material prepared by Low-temperature molecular beam epitaxy, which combines the functionality of semiconductors with that of ferromagnetic materials. This paper introduced the structural properties, growth method, Curie temperature, magnetic domain, magnetic moment, magnetic properties and several multiplayer heterstructures related to GaMnAs systematically. In addition, The application, present situation and prospect was simply generalized and analysed.

关 键 词：GAMNAS 半磁半导体 居里温度 磁畴 磁矩 磁性质 DMS 镓锰砷化合物 低温分子束外延 结构 

分 类 号：TN304.7[电子电信—物理电子学]