n型半导化TiO_2压敏陶瓷的导电机制  

Conducting Mechanism of Semiconducting n-TiO_2 Varistor Ceramics

作　　者：周方桥[1] 梁鸿东[1] 丁志文[1] 陈志雄[1] 庄严 

机构地区：[1]广州大学理学院固体物理与材料研究实验室,广州510405 [2]广州新日电子有限公司,广州510335

出　　处：《哈尔滨理工大学学报》2002年第6期29-31,共3页Journal of Harbin University of Science and Technology

基　　金：广州市教育局资助项目(01-2)

摘　　要：分析了n型半导化TiO_2压敏陶瓷中晶粒间界处的受主态性质,得出为晶界受主态的能级是多级化的;利用晶界平衡热电子发射势垒模型,合理地解释了该材料的I-V非线性特征;从理论上推导出了非线性系数α正比于晶界电压,且与晶界受主态的分布函数有密切关系.An analysis based on property of the acceptors at grain boundaries of semiconducting n- TiO2 varistor ceramic and the distribution with multi energy levels were considered in this paper. The I-V nonlinear characteristic of the ceramics was explained reasonably by thermo - electron emission model of grain boundary barrier. The relation of nonlinear coefficient a in proportion to the voltage at grain boundary was induced theoretically, and related to distributing function of acceptor state density in the grain boundary.

关 键 词：n型半导化 TIO2压敏陶瓷 导电机制 压敏电阻 微观结构 二氧化钛 分布函数 受主态 

分 类 号：TN304.21[电子电信—物理电子学] TN3