微测辐射热计用氧化钒薄膜制备及特性  

Preparation and Characteristics of Vanadium Oxide Thin Film for Micro-bolometer Application

作　　者：茹国平[1] 曹永峰[1] 李炳宗[1] 

机构地区：[1]复旦大学微电子学系,上海200433

出　　处：《微细加工技术》2002年第4期45-53,65,共10页Microfabrication Technology

摘　　要：热敏薄膜电阻制备是非致冷微测辐射热计红外焦平面的一项关键技术。对目前在非致冷微测辐射热计研制中得到成功应用的氧化钒薄膜的特性、制备及表征技术进行综述。氧化钒存在多种物相和结构 (VOx:0 <x≤ 2 .5) ,它们具有不同的半导体、金属导电特性 ,某些相在一定温度下会发生半导体 -金属相变 ,材料的电阻率和光学透射率在这些相变温度附近会发生极大的变化。有的氧化钒 (x≈ 2 )在室温附近具有较高的电阻温度系数 ,可达 ( - 2～ - 4) %K-1。目前制备氧化钒薄膜有蒸发、溅射、脉冲激光沉积、溶胶 -凝胶、氧化还原等方法 ,其中溅射法具有大面积均匀、工艺温度低、与衬底附着力强、与集成电路工艺兼容性好等诸多优点 ,在非致冷微测辐射热计红外焦平面的研制中有很好的应用前景。Preparation of thermal sensitive thin film resistor is one of key technologies in uncooled micro bolometer IR FPA fabrication. The properties, preparation and characteristics of vanadium oxide thin film, which has been successfully used in un cooled micro bolometer fabrication,are reviewed.Tens of different VO x(0<x≤2.5) phases exist, which have different semiconductor/metal conducting characteristics. Semiconductor-metal transition will take place at certain temperature in some phases, with drastic changes in resistivity and optical transmission of a thin film. VO x(x≈2) has temperature coefficient of resistivity as high as (-2～-4)%K -1 near room temperature. A lot of methods, such as evaporation, sputtering, pulsed laser deposition, sol-gel, and oxidation/reduction, have been used to prepare vanadium oxide thin film. Among them, sputtering technique offers some crucial advantages, such as large-area uniformity, low processing temperature, high adhesion to substrate, and high compatibility to the current VLSI technology, making it a very promising technique in uncooled micro-bolometer IR FPA fabrication.

关 键 词：微测辐射热计 制备 氧化钒 电阻温度系数 溅射 热敏薄膜电阻 

分 类 号：TN37[电子电信—物理电子学]