反应离子刻蚀PMMA的各向异性刻蚀研究  

Study on Anisotropic Etching in Reactive Ion Etching of PMMA

作　　者：黄龙旺[1] 杨春生[1] 丁桂甫[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院薄膜与微细加工重点实验室,上海200030

出　　处：《微细加工技术》2002年第4期54-57,共4页Microfabrication Technology

基　　金：国家自然科学基金资助项目 (5 0 0 75 0 5 5 )

摘　　要：研究目的是优化Ni掩模PMMARIE的刻蚀参数 ,在氧刻蚀气体中加入表面钝化性气体CHF3 ,以较快的刻蚀速率获得垂直的侧壁和最小的掩模钻蚀。采用平行板结构的反应离子刻蚀机刻蚀 ,研究了刻蚀气压、CHF3 /O2 比率和刻蚀温度对垂直、侧向刻蚀速率和PMMA微结构形貌的影响。试验表明 :当CHF3 含量大于 50 %或O2 工作气压较低时 ,会显著影响RV/RL 比 ,当RV/RL 比大于 8时 ,试样呈现出完全各向异性刻蚀。The optimization of RIE parameters for Ni mask PMMA etching is studied. The CHF 3 gas of the surface passivation effect is added in the O 2 etching gas to obtain the vertical side wall and minimal mask undercut at a fast etching rate. A RIE system with parallel plate reactor is used to investigate the influence of process gas pressure, CHF 3/O 2 ratio and sample temperature on the vertical etching rate, lateral etching rate and PMMA microstructure.The experimental results show that the etching ratio R V/R L increases rapidly when CHF 3 content surpasses 50% or the process gas O 2 pressure is lower and the sample has good anisotropic etching.

关 键 词：反应离子刻蚀 PMMA 各向异性 RIE 干法刻蚀 

分 类 号：TN305.7[电子电信—物理电子学] TN40