低温多晶Si TFT-LCD技术  

Low-Temperature Poly-Si TFT-LCDs Technology

作　　者：杨庆祥[1] 张凤翙 

机构地区：[1]安阳大学,河南安阳455000 [2]安阳电子管厂,河南安阳455000

出　　处：《真空电子技术》2002年第6期32-35,共4页Vacuum Electronics

摘　　要：介绍了大面积低温多晶Si薄膜晶体管液晶显示技术的发展水平。最近 ,低温多晶Si薄膜晶体管业已取得很大进展 ,比如高质量多晶Si薄膜的受激准分子激光退火 (激光再结晶 )工艺 ,大面积掺杂用离子掺杂工艺 ,以及低温原子团簇射式化学汽相沉积工艺。The state of the arts of large area low temperature TFT LCDs were introduced in this paper. In recent times,low temperature poly Si thin film transistor has made great progress,such as excimer laser annealing of high quality poly Si film,ion doping for large area doping,and high quality gate SiO 2 film formation by using the low temperature radical shower CVD(RS CVD) method.

关 键 词：低温 多晶硅 薄膜晶体管液晶显示 受激准分子激光退火 激光再结晶 簇射式化学汽相沉积 

分 类 号：TN873.93[电子电信—信息与通信工程]