反应沉积法制备c轴取向ZnO薄膜及表征  

Characterization of c-axis Oriented Zinc Oxide Films Prepared by Reactive Deposition

作　　者：刘坤[1] 季振国[1] 杨成兴[1] 芮祥新[1] 王龙成[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《真空科学与技术》2002年第6期470-473,共4页Vacuum Science and Technology

基　　金：国家重点基础研究专项 (973 )资助项目No G2 0 0 0 0 683 -0 6

摘　　要：以二水合醋酸Zn为原料 ,采用反应沉积方法在非晶玻璃衬底上制备出了高度c轴取向、结晶良好的ZnO薄膜。研究了不同衬底温度和Zn源温度对ZnO薄膜性质的影响 ,探讨了不同衬底温度和Zn源温度下生长ZnO薄膜的最佳参数。本文还讨论了该方法制备ZnO薄膜的沉积机制及优化条件下样品的透光特性。Highly c axis oriented and polycrystalline ZnO thin films were prepared on glass substrate by reactive deposition using zinc acetate as zinc source.The dependences of the film properties on the substrate temperature and the source temperature were discussed and optimal parameters were obtained.The deposition mechanism of ZnO film and the transmittance of the ZnO films were also discussed.

关 键 词：反应沉积法 制备 C轴取向 ZNO薄膜 表征 X射线衍射 紫外辐射光吸收 氧化锌 半导体 

分 类 号：TN304.21[电子电信—物理电子学]