分子束外延生长ZnO薄膜及性能研究  

Growth and characterization of ZnO thin film prepared by molecular-beam epitaxy on Si(100)

作　　者：周映雪[1] 史向华[2] 俞根才[1] 张新夷[3] 阎文胜[4] 韦世强[4] 谢亚宁[5] 

机构地区：[1]复旦大学物理系应用表面物理国家重点实验室,上海200433 [2]长沙电力学院物理系,长沙410077 [3]复旦大学同步辐射研究中心,上海200433 [4]中国科学技术大学国家同步辐射实验室,合肥230029 [5]中国科学院高能物理研究所同步辐射室,北京100039

出　　处：《核技术》2003年第1期9-12,共4页Nuclear Techniques

基　　金：国家重点基础研究专项 (G2 0 0 1cb3 0 95 0 5 )和表面物理实验室开放课题的资助

摘　　要：用分子束外延 (MBE)和氧气氛方法 ,并改变束源炉和衬底生长温度 ,在Si(10 0 )衬底上 ,采用Zn作缓冲层以解决ZnO层与衬底间的晶格失配问题 ,生长得到ZnO薄膜。在ZnO Zn Si(10 0 )薄膜样品的X射线衍射 (XRD)谱中 ,观测到ZnO的 (10 0 )、(0 0 2 )、(10 1)、(10 2 )和 (10 3)等衍射峰 ;用原子力显微镜 (AFM)观测ZnO薄膜的表面形貌 ,为直径约 80— 90nm的量子点 ,表明已得到具有纳米结构的ZnO薄膜。用同步辐射EXAFS技术研究了ZnO薄膜的局域结构 。ZnO is a II-VI compound with a wide direct gap of about 3.37eV at room temperature. It is an important compound for information techniques. The ZnO thin films are deposited on Si (100) substrate by molecular beam epitaxy (MBE) associated with oxygen atmosphere method, under different temperatures of molecular beam source and substrate. The Zn buffer layer is used in order to minimize the effect of mismatch of crystal lattice between Si and ZnO. In the X-ray diffraction spectrum of ZnO/Zn/Si (100), peaks specific to ZnO at (100), (002), (101), (102) and (103) were observed. Images from the atomic force microscope show that the ZnO films are composed of small granules with the size of 80-90nm approximately. The local structure of ZnO films has been studied by the synchrotron radiation EXAFS technique. Some local structural parameters such as bond length, coordination number and disorder degree are obtained for the first shell. We suggest that the disorder of as grown ZnO films be probably due to the existence of hanging bonds on the surface of ZnO nanometer granules.

关 键 词：分子束外延 ZNO薄膜 性能 扩展X射线吸收精细结构 X射线衍射 氧化锌 半导体 材料 同步辐射 

分 类 号：TN304.21[电子电信—物理电子学] O484[理学—固体物理]