SOI电光开关中热光效应分析  

Analysis of Impact of Thermo Optical Effect on a 2×2 Electro-optical Switch in Silicon-on-insulators

作　　者：严清峰[1] 余金中[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《光电子．激光》2003年第1期1-4,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学重大基金资助项目 (69990 5 40 698962 60 ) ;国家"九七三"资助项目 (G2 0 0 0 0 3 66)

摘　　要：分析了 SOI(silicon- on- insulator) 2× 2电光开关工作时热光效应对等离子色散效应的影响。采用二维半导体器件模拟器 PISCES- 对器件进行了模块。结果表明 ,热光效应对等离子色散效应的影响与调制区长度密切相关 ,当调制区长度较短时 ,热光效应的影响不容忽视 ;当调制区长度大于 5 0 0μm时 ,这种影响可以忽略不计。The impact of thermooptical effect on a 2×2 electrooptical switch in silicon-on-insulators (SOI) has been analyzed. The device modulation area has a lateral injection PIN structure. The simulation result by means of PISCES-II shows that the impact of thermo-optical effect on the plasma effect correlates to the modulation area length. The impact can't be ignored when the modulation area is very short while it may be neglected when the modulation area is longer than 500 μm.

关 键 词：电光开关 等离子色散效应 热光效应 SOI 

分 类 号：TN204[电子电信—物理电子学]