硅基法布里-珀罗微腔的室温发光  

Room Temperature Luminescent Properties of Si-Based Fabry-Perot Microcavity

作　　者：王燕[1] 但亚平[1] 岳瑞峰[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2003年第1期68-71,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :60 1760 3 1)~~

摘　　要：提出了一种新型基于法布里 -珀罗 (F- P)微腔的发光器件结构 .它采用 PECVD方法制备的非晶硅 /二氧化硅结构作为微腔中的布拉格反射腔 ,非晶碳化硅薄膜作为中间光发射层 ,通过对一维方向光子的限制 ,使发光层荧光强度增强 ,谱线变窄 .通过调节发光层和反射腔膜厚及折射率 ,可以精确控制发光峰位 .实验结果证明该结构可望实现全硅基材料的强室温可见光发射 .A new kind of Fabry-Perot microcavity structure is presented in which the Si/SiO x N y distributed Bragg reflectors (DBR) with a-Si 1-x C x acting as spontaneous emission layer are fabricated by plasma enhanced chemical vapor deposition (PECVD).The modified photon density of state of Fabry-Perot microcavity in one dimension will result in the enhancement of the spontaneous emission at the photon energies corresponding to the microcavity resonance.Besides,the linewidth of the spontaneous emission will be reduced greatly at the microcavity resonance.By adjusting the thickness and refractive index of the spontaneous emission layer and the DBR sublayer,the luminescence peak position can be controlled precisely.By means of simulation and experiment,this device makes silicon-based materials possible candidate for the room temperature visible light emission media.

关 键 词：硅基 法布里-珀罗微腔 室温发光 碳化硅 光致发光 多孔硅 

分 类 号：TN36[电子电信—物理电子学]