金属-聚硅烷-硅结构的电容-电压特性  

C-V Characteristics of Metal-Polysilane-Silicon Structures

作　　者：彭志坚[1] 司文捷[1] 谢茂浓[2] 傅鹤鉴[3] 苗赫濯[1] 

机构地区：[1]清华大学材料科学与工程系 [2]四川大学物理系 [3]四川大学化学系,成都610064

出　　处：《物理化学学报》2003年第2期97-99,共3页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(29771024;59873015);国家重点基础研究发展规划(G2000067203-2)资助项目~

摘　　要：设计了metal-polysilane-silicon(MPS)结构.首次发现MPS结构具有电容-电压(C-V)特性,许多MPS结构的C-V曲线平带电压为正,且其C-V特性与聚硅烷枝化度一致,即随着聚硅烷枝化度提高,MPS结构C-V曲线明显向电压轴正向漂移.聚硅烷MPS结构有望设计成测定聚硅烷枝化度装置.Metal polysilane silicon(MPS) structures were designed in this investigation.It was first discovered that the MPS structures possessed capacitance voltage(C-V) characteristics,and the C-V characteristics were consistent with the branching densities of the polysilanes,i.e.,with the increase in branching densities,the C-V curves drifted more dramatically towards the positive direction of the electrical voltage axis.The MPS structures may be promising in designing devices for the measurement of the branching densities of the branchedpolysilanes.Many of the flat band voltages of the MPS structures were positive,which played positive roles in semiconductor devices.

关 键 词：聚硅烷 MPS结构 C-V特性曲线 平带电压 枝化度 

分 类 号：O631[理学—高分子化学] O646[理学—化学]