SOIM新结构的制备及其性能的研究  

Fabrication of silicon-on-insulator-multilayer structure by epitaxial layer transfer

作　　者：谢欣云[1] 林青[1] 门传玲[1] 刘卫丽[1] 徐安怀[1] 林成鲁[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《物理学报》2003年第1期207-210,共4页Acta Physica Sinica

基　　金：国家重点基础研究专项经费 (批准号 :G2 0 0 0 0 3 65 );国家自然科学基金 (批准号 :699760 3 4)资助的课题~~

摘　　要：制备在以SiO2 为绝缘埋层的SOI材料上的电子器件存在着自加热问题 .为减少自加热效应和满足一些特殊器件 电路的要求 ,利用多孔硅外延转移技术制备出以二氧化硅和氮化硅为多绝缘埋层的SOI新结构 .高分辨率透射电镜和扩展电阻测试结果表明得到的SOIM新结构具有很好的结构和电学性能 ,退火后的氮化硅埋层为非晶结构 .Due to the very low thermal conductivity of the thick-buried oxide layer, the silicon-on-insulator( SOI) power devices have an inherent self-heating effect, which limits their operation at high current level. Adopting the new silicon-on-insulator-multilager (SOIM) structures is a good solution to reduce the self-heating effect. In this paper, the SOIM structures were successfully produced by electron beam evaporation of silicon on porous silicon and epitaxial layer transfer. The quality of the structures was investigated by XTEM and SRP. Experimental results show that the buried Si3N4 layer is amorphous and the new SOIM sample has good structural and electical properties.

关 键 词：制备 氮化硅薄膜 二氧化硅薄膜 SOIM新结构 多孔硅外延转移 电绝缘隔离性能 

分 类 号：TN305[电子电信—物理电子学]