离子束合成钇硅化物的结构及红外谱特征  

Structure and infrared absorption characterizations of yttrium silicides formed by ion beam synthesis

作　　者：王文武[1] 谢二庆[1] 贺德衍[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《物理学报》2003年第1期233-236,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :6980 60 0 5 );甘肃省自然科学基金资助的课题~~

摘　　要：将稀土金属钇离子注入到n型单晶Si(111)中制备出钇硅化物埋层 .利用x射线衍射、卢瑟福背散射和傅里叶红外吸收谱测量分析了样品的结构、原子的埋层分布和振动模式 .结果表明 ,Y离子在注入过程中已与基底中的Si原子形成了YSi2 结构相 .真空下的红外光辐照处理促使YSi2 择优取向生长 ,埋层中Si与Y的平均原子浓度比由2 4下降为 2 0 ,与六方YSi2 的化学计量比一致 .还给出了钇硅化物的特征红外吸收谱 .Buried hexagonal YSi2 layers were formed using 100 keV yttrium ions to a dose of 1 x 10(18)y(+)cm(-2) implanted into (111) oriented silicon wafers by a metal vapor vacuum are ion source. The structure and infrared absorption spectra of the compound layers have been investigated by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and Fourier transform infrared ( FT-IR) transmittance spectrometry. It was shown that YSi2 has been directly formed during the implantation. A tendency of preferred growth was found in the following process of infrared irradiation. RBS measurements revealed that, after infrared irradiation, the average atomic density ratio of Si to Y in the buried layers decreases from 2.4 down to around 2.0, which is close to the stoichiometry of hexagonal YSi2. The characteristic vibration absorption spectra of the silicides have been obtained by FTIR transmittance measurements.

关 键 词：离子束合成 钇硅化物 离子注入 红外光辐照处理 特征红外光谱 大规模集成电路 

分 类 号：TN304[电子电信—物理电子学]