提高深度剖析拉曼光谱的纵向分辨能力  

SESOLUTION IMPROVEMENT OF RAMAN DEPTH PROFILE

作　　者：徐晓轩[1] 林海波[1] 武中臣[1] 杨延勇[2] 朱箭[1] 张存洲[1] 张光寅[1] 

机构地区：[1]南开大学光子学中心,天津300071 [2]英国RENISHAW公司

出　　处：《红外与毫米波学报》2003年第1期63-67,共5页Journal of Infrared and Millimeter Waves

摘　　要：使用适当近似从理论上给出了共焦显微拉曼光谱仪的纵向仪器响应函数 .针对相对薄 (几个 μm)的样品 (诸如半导体薄膜材料 )给出了一个简化的卷积模型 .利用共焦显微拉曼光谱的深度剖析方法 ,研究了激光晶化后的非晶硅薄膜 ,并利用反卷积算法 ,提高了对薄膜纵向结构的分辨能力 ,发现了激光晶化产生的纳米微晶硅仅位于薄膜中间 .The resolution ability of confocal Raman microscopy on the depth direction was theoretically discussed, and the response equation of confocal Raman microscopy on the depth direction was obtained by using properly approximation. A simply convolution model of thin sample (just like semiconductor film) was designed. Based on the confocal Raman spectrometer and depth profile method, the character of crystalline phase in laser recrystallized poly-Si thin films was researched. By using the deconvolution algorithm, the higher resolution structure distribution on depth direction of the film was obtained, and nano-crystalline phase was discovered locating only in the middle of thin film.

关 键 词：纵向分辨能力 共焦显微拉曼光谱仪 深度剖析 激光晶化 微晶硅薄膜 卷积模型 薄膜分析 

分 类 号：O484.5[理学—固体物理]