VDMOSFET的T_(ox)与特征导通电阻R_(onA)的关系  

The Relationship Between T_(ox) and Special On-Resistance of VDMOSFET

作　　者：王中文[1] 高嵩[1] 石广源[1] 

机构地区：[1]辽宁大学物理系,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2003年第1期36-39,共4页Journal of Liaoning University：Natural Sciences Edition

摘　　要：介绍了功率VDMOSFET导通电阻的模型 ,重点讨论了栅SiO2 厚度Tox对特征导通电阻RonA的影响 ,经过大量的理论计算 ,给出了击穿电压为 2 0V时VDMOSFET的Tox与RonA的关系曲线 .The module of power VDMOSFET is introduced. The effects of thickness T ox of gate (SiO 2) on special on state resistance are discussed in detail. After large theoretical calculations, the curve of relationship of Tox and R on A is obtained when BV ds =20 V. The relationship between optimal cell dimensions and T ox is also first pvesented.

关 键 词：Tox 特征导通电阻 RonA 功率VDMOSFET 单胞电阻 功率容量 栅极SiO2厚度 

分 类 号：TN386[电子电信—物理电子学]