He^+、N^+注入GaN的背散射和电学特性研究  

RBS Study on GaN Implated With He^+, N^+

作　　者：周生强[1] 姚淑德[1] 焦升贤[1] 孙长春[1] 孙昌[1] 

机构地区：[1]北京大学技术物理系,北京100871

出　　处：《原子能科学技术》2003年第1期28-30,共3页Atomic Energy Science and Technology

摘　　要：采用背散射/沟道(RBS/channeling)技术分析了GaN的物理性质和结晶品质。研究了He+、N+注入所引起的GaN的电阻变化和与退火温度的关系。在不同温度下,氮气保护退火30min,用Hall法测量电阻率。测量结果表明:GaN的电阻率增大7～8个数量级。在200～400℃下退火,电阻率变化最大。经高温(600～700℃)退火后,电阻率仍比注入前大3～4个数量级。The structure and crystal quality of GaN are studied using Rutherford backscattering spectrometry (RBS) and channeling. The samples are grown on sapphire substrate by metalorganic vaporphase epitaxy. The He+, N+ implantation with different ion energy and postimplantation annealing are investigated. 7～8 orders increasing of resistivity is observed by Hall measurements after specific temperature annealing, and the optimized annealing temperature is about 200 and 400 ℃ for He+ and N+, respectively. After 600～700 ℃ annealing, the resistivity is still very high, and radioation damages is found by RBS/channeling.

关 键 词：GAN 背散射 电学特性 离子注入 电阻率 辐照损伤 半导体 改性 氦离子 氮离子 

分 类 号：TN304.23[电子电信—物理电子学]