采用绝缘体上的半导体技术制备集成的多模干涉型光耦合器和光开关(英文)  

Integrated MMI Optical Couplers and Optical Switches in Silicon-on-Insulator Technology

作　　者：余金中[1] 魏红振[1] 严清峰[1] 夏金松[1] 张小峰[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《中国科学院研究生院学报》2003年第1期1-6,共6页Journal of the Graduate School of the Chinese Academy of Sciences

基　　金：supportedbyNationalMinistryofScienceandTechnology(G2 0 0 0 0 3 666)andtheNationalSeienceFoundationofChina(698962 60and69990 5 40 )

摘　　要：在光学系统中,SOI(绝缘体上的半导体)上制备集成的MMI(多模干涉)型光耦合器已成为一种愈来愈引人注目的无源器件.由于Si和SiO2 之间具有大的折射率差,在SOI波导中可以采用SiO2 薄膜( <1.0 μm)作限制层,这与超大规模集成电路工艺相兼容.描述了采用SOI技术制备集成的MMI型光耦合器和光开关的设计和制造结果.业已证实,2× 2MMI MZI(多模干涉 麦赫 曾德干涉)型热光开关的开关时间小于 2 0 μs.Integrated multimode interference (MMI) coupler based on silicon on insulator (SOI) has been becoming a kind of more and more attractive device in optical systems. SiO 2 thin cladding layers (<1.0 μm) can be usedin SOI waveguide due to the large index step between Si and SiO 2 , making them compatible with VLSI technology. The design and fabrication of MMI optical couplers and optical switches in SOI technology are presented in the paper. We demonstrated the switching time of 2×2 MMI MZI thermo optical switch is less than 20 μs.

关 键 词：绝缘体 半导体 制备 多模干涉 光耦合器 光开关 集成光学 SOI技术 

分 类 号：TN622[电子电信—电路与系统] TN256