双电测组合法测试半导体电阻率的研究  

Study of Measuring Semiconductor Resistivity by Three Mode Dual Electro-Testing Configuration with Four-Point Probes

作　　者：宿昌厚[1] 鲁效明[2] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022 [2]中国计量科学研究院集成电路室,北京100013

出　　处：《Journal of Semiconductors》2003年第3期298-306,共9页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :6 9346 0 0 2 )~~

摘　　要：对双电测组合四探针法测试方块电阻 (Rs)和体电阻率 ( ρ)进行了研究 ,从理论和实践上揭示三种组合模式的共同优点 :测量结果与探针间距无关 ,可使用不等距探针头 ;具有自动修正边界影响的功能 ,不必寻找修正因子 ;不移动探针头即可得知均匀性 .推导出用于体电阻率时的厚度函数 .论述了Rs、ρ、大小样片及边界附近的测试原理 ,给出了Rs 和 ρ的计算公式 .A complete research of dual-electro-testing configuration technique with three modes for measuring sheet resistance and wafer resistivity of a semiconductor is introduced.This new method can automatically eliminate errors caused by geometrical factors and improve measuring accuracy.Here are the outstanding advantages:The measurig results do not depend on the spacing of probes.Neither the mechanical drifting of probes nor the uneven distance between them has any effect on outcome.Therefore unevenly spaced probes can be used.No edge rectification is necessary for the small circle or rectangle sample and for the probes located near the edge.Homogeneity within a small range can be simultaneously obtained using the three modes of configuration without move of probes.But it is impossible for classical method.This study also initially solved the problem of thickness function for calculating wafer resistivity with dual electro-testing configuration.The systematic theoretical demonstration and a lot of experimental data are given.A group of expressions for calculating R s and ρ is shown.The dual electro-testing configuration technique is significantly better than traditional four-point probes method.It is an innovation.

关 键 词：半导体 双电测组合四探针法 方块电阻 电阻率 

分 类 号：TN304.07[电子电信—物理电子学]