InP-HEMT中复合沟道的设计与生长  

Design and growth of composite channel of InP HEMTs

作　　者：邱凯[1] 张晓娟[1] 陈建炉[1] 

机构地区：[1]南京电子器件研究所,江苏南京210016

出　　处：《微纳电子技术》2003年第3期8-10,28,共4页Micronanoelectronic Technology

摘　　要：设计并生长了带有复合沟道的InP基HEMT材料,该材料具有较高的二维电子气浓度和迁移率。在使用In_xGa_(1-x)As/In_(0.53)Ga_(0.47)As复合沟道时,当In组分等于0.7时得到较好的沟道输运性能;在使用InAs复合沟道时,得到了二维电子气浓度为2.3×10^(12)/cm^2、室温迁移率高达13600 cm^2/V·s的性能优良的HEMT材料。We have designed and grown InP-based HEMT with composite channel, the materials achieve higher 2DEG density and mobility. With the use of InxGa1-xAs/In0.53Ga0.47As composite channel, the better channel conductivity is achieved at x =0.7. With the use of InAs composite channel, the corresponding electron mobility is as high as 13600cm2/V·s with 2DEG density of 2.3×10~12/cm2.

关 键 词：InP-HEMT 高电子迁移率晶体管 复合沟道 磷化铟基 

分 类 号：TN325.3[电子电信—物理电子学] TN302