一种新型的开关共点耦合神经MOS晶体管  

A Newly Developed Common Point Switch-coupled NeuMOS Transistor

作　　者：曹亚明[1] 汤玉生[1] 

机构地区：[1]上海交通大学微电子技术研究所,200030

出　　处：《固体电子学研究与进展》2003年第1期23-26,34,共5页Research & Progress of SSE

摘　　要：神经 MOS晶体管 (简称 Neu MOS)是一种多输入多阈值的高功能度新型 MOS器件。作者在其改进结构钟控神经 MOS晶体管的启发之下 ,提出了一种新型的开关共点耦合神经 MOS晶体管结构。在这种新的结构中 ,控制信号通道经传输门在一点接入浮栅。理论分析和采用自建的 PSPICE子电路模型进行的模拟分析表明 ,通过传输门接入浮栅的多种控制电平的不同组合可以对器件的阈值进行有效地控制。由于新结构可以消除热载流子注入对其可靠性的影响和具有相对高的速度 ,因此 ,它是一种具有较大潜力的 SOC(片上系统 )单元器件。The neuron MOS transistor(also called NeuMOS for short) is a recently invented device with high functionality, which has a number of inputs and threshold voltages. With the enlightenment of clock-controlled NeuMOS, we have developed a new architecture, i.e., a common point switch-coupled NeuMOS. In this new architecture, control signal paths are connected to the floating gate via transfer gate. The theoretic analysis and simulation in this paper with the sub-circuit based PSPICE created by us show that the different combination of multi control signals connected to the floating gate can influnce the threshold voltage of this device. As the new architecture with high speed can eliminate the effect of hot-carrier injection, it is a powerful device in SOC.

关 键 词：神经MOS晶体管 神经金属氧化物半导体晶体管 

分 类 号：TN386.1[电子电信—物理电子学]