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作 者:陶长远[1]
机构地区:[1]昆明物理所
出 处:《激光与红外》1989年第5期39-46,共8页Laser & Infrared
摘 要:在改进的开管液相外延生长系统中用富碲母液已经重复地长出了长波(8~14μm)Hg_(1-x)Cd_xTe液相外延层。在外延过程中低温区的纯汞能够起到维持系统的汞压平衡和调整母液组份的作用,系统的温度分布、两温区降温的同步性及生长过冷度△T是液相外延Hg_(1-x)Cd_xTe的重要参量。通过对Hg_(1-x)Cd_xTe外延层的组份、结构分析和原生片的电参数测试表明,所生长的长波Hg_(1-x)Cd_xTe外延材料质地十分优良。文章最后还对Hg_(1-x)Cd_xTe液相外延生长中的几个常见问题进行了简要的讨论,其中最重要的是应努力改善CdTe衬底的质量。The long-wave (8-14μm)Hg_(1-x)Cd_xTe LPE layers have been grown repeatedly from Te-rich solutions in an improved open-tube LPE system. Pare mercury in low temperature region can play the role of keeping the Hg partial pressure balance of the system and adjusting the solution composition in epitaxial process. The temperature distribution of the system, cooling synchronism of the two-zone and supercooling AT are the important parameters for LPE Hg_(1-x)Cd_xTe. By analysing the composition and the structure of the Hg_(1-x)Cd_xTe layers and measuring the as-grown electrial parameters it has been shown that the grown long-wave Hg_(1-x)Cd_xTe epitaxial layers are very excellent several problems that we often encounter in Hg_(1-x)Cd_xTe LPE have been discussed summarily, where the improvement of quality of CdTe substrates is the most important thing of all.
分 类 号:TN304.25[电子电信—物理电子学]
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