钟控神经MOS晶体管的建模及其电路仿真  

Modeling of Clock-controlled NeuMOS and Simulation of Clock-controlled NeuMOS IC

作　　者：曹亚明[1] 汤玉生[1] 

机构地区：[1]上海交通大学微电子技术研究所,200030

出　　处：《固体电子学研究与进展》2003年第1期89-95,共7页Research & Progress of SSE

摘　　要：神经 MOS晶体管 (简称 Neu MOS)是最近才发明出来的一种高功能度的多输入多阈值的新型 MOS器件。在其十年的发展历程中 ,一些新型结构又被陆续提出 ,以期获得更加优越的性能。文中建立了一种新型Neu MOS即钟控 Neu MOS晶体管的 PSPICE子电路模型 (库 ) ;并利用该模型对由钟控 Neu MOS晶体管构建的电路进行了实时模拟 ,模拟结果与电路特性的实测结果有很好的吻合 ,因此可证明建立的子电路模型 (库 )可用于钟控 Neu MOS晶体管电路的设计和模拟验证。The neuron MOS transistor(also called NeuMOS for short)is a recently invented device with high functionality,which has a number of input gates and threshold voltages.During its history of 10 years,some new architectures have been developed to gain more ideal performance.This paper emphasizes the model of clock-controlled NeuMOS.In addition,by using the newly developed sub-circuit model and its library,some NeuMOS ICs consisting of the above architecture published in literatures are simulated.The simulation results are compared with measured results and verify the accuracy and practicality of the proposed sub-circuit model and its library.The compared results show that the newly developed sub-circuit model and its library can be used as effective tool for design and simulation of NeuMOS IC.

关 键 词：神经MOS晶体管 建模 电路仿真 神经金属-氧化物-半导体晶体管 钟控神经晶体管 子电路模型 模拟行为建模功能 浮栅电势 

分 类 号：TN386.1[电子电信—物理电子学]