多孔硅在电容式微传声器制备中的应用研究  

Applications of Porous Silicon in Fabrication Technology of Condenser Microphone

作　　者：宁瑾[1] 刘忠立[1] 刘焕章[1] 葛永才[1] 

机构地区：[1]中国科学院半导体研究所微电子中心传感技术国家重点实验室,北京100083

出　　处：《微细加工技术》2003年第1期76-80,共5页Microfabrication Technology

摘　　要：多孔硅具有选择性生长以及可以迅速释放的特性,是MEMS工艺中很好的牺牲层材料。探讨了多孔硅牺牲层工艺的特点,并通过实验证明了其在电容式微传声器制备中的应用可能。提出可以采用氧化多孔硅材料作牺牲层制备微传声器的空气隙的工艺方法,有效地解决其他牺牲层材料与振膜应力不匹配以及释放时间过长的问题,使微传声器的制备成品率得到提高。同时提出运用多孔硅牺牲层工艺制备微传声器的背极板声学孔,可以获得厚度达10μm以上的单晶硅作背极板,背极板刚性好,不会随着外加声压振动,有效地提高了微传声器的性能。The porous silicon can be used in the MEMS process as a good sacrificial layer due to its selective growth and easy etching properties.The features of the porous silicon sacrificial layer technology are discussed.Its application to the fabrication of the condenser microphone is proved by the experiments.The method of using the oxide of the porous silicon as the sacrificial layer to form the air gap of the microphone is proposed.It solves the nonmatched stress with the vibrating membrane and long etch time the other sacrificial layer materials have and then increases the yield of the microphone. The technology is also applied to form the acoustic holes of the microphone's backplate.The monocrystalline silicon backplate of more than 10μm thickness are obtained.The backplate has excellent rigidity and will not vibrate with the external acoustic pressure ,which improve the microphone performances efficiently.

关 键 词：多孔硅 牺牲层 电容式微传声器 

分 类 号：TN304.12[电子电信—物理电子学]