Si/SiGe/Si HBT的直流特性和低频噪声  

Si/SiGe/Si HBT's DC Characterization and Its Low-frequency Noise

作　　者：廖小平[1] 张中平[1] 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《电子器件》2003年第1期22-24,共3页Chinese Journal of Electron Devices

基　　金：东南大学科学基金资助

摘　　要：在对Si/SiGe/SiHBT及其Si兼容工艺的研究基础上 ,研制成功低噪声Si/SiGe/SiHBT ,测试和分析了它的直流特性和低频噪声特性 。Based on the researches on Si/SiGe/Si HBT and its compatibility with Si process, one low noise Si/SiGe/Si HBT construction is fabricated. The HBT's DC characterization and its low frequency noise are measured and analyzed. Based on above researches, the better low noise Si/SiGe/Si HBT will be made out.

关 键 词：SI/SIGE/SI HBT 直流特性 低频噪声 

分 类 号：TN3[电子电信—物理电子学]